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Vishay TrenchFET N-Channel MOSFET 58A 30V Enhancement Mode 8-Pin SO-8 SIRA14DP-T1-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 1.12mm |
| Length | 6.25mm |
| Model | SIRA14DP-T1-GE3 |
| Width | 5.26mm |
| Mount Type | Surface |
| Series | TrenchFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SO-8 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 58A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 8.5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 31.2W |
| Typical Gate Charge Qg @ Vgs | 19.4nC |
| Maximum Gate Source Voltage Vgs | -16, +20V |
| Forward Voltage Vf | 0.76V |
Key Features
- Supports a maximum continuous drain current of 58 amperes.
- Operates at a maximum drain-source voltage of 30 volts.
- Utilizes an enhancement mode channel for efficient switching.
- Features a compact SO-8 surface-mount package with 8 pins.
- Maximum power dissipation is 31.2 watts for reliable thermal performance.
- Highest drain-source resistance (Rds) is 8.5 milliohms, ensuring low conduction losses.
- Typical gate charge of 19.4 nanocoulombs at Vgs, enabling fast switching capabilities.
- Wide operating temperature range from -55°C to 150°C for demanding environments.
Product Description
Vishay SIRA14DP-T1-GE3 is a high-performance TrenchFET N-Channel MOSFET designed for power electronics applications requiring high current and efficient switching. With a maximum continuous drain current of 58A and a drain-to-source voltage rating of 30V, this device offers superior performance in power management circuits.
Equipped with an enhancement mode channel and housed in an 8-pin SO-8 surface mount package, this MOSFET is ideal for compact electronic assemblies. It achieves a low maximum drain-source on resistance of 8.5 milliohms, contributing to lower power loss and better thermal management. The typical gate charge of 19.4 nanocoulombs supports fast switching frequencies, making it suitable for modern switching power supplies and converters.
The MOSFET supports a maximum power dissipation of 31.2 watts and operates reliably within a broad temperature range from -55°C to 150°C. Its compact size (6.25mm length, 5.26mm width, 1.12mm height) allows integration into space-constrained layouts. This device is manufactured in accordance with Vishay's TrenchFET Gen IV technology, ensuring enhanced ruggedness and robustness for industrial, automotive, and consumer electronic applications.
Typical use cases include power switching, load switching, DC-DC converters, and motor control circuits in industrial automation, automotive electronics, and consumer devices. The surface mount SO-8 package is compatible with automated assembly lines to improve manufacturing efficiency and reduce costs.
Supports a maximum continuous drain current of 58 amperes. Operates at a maximum drain-source voltage of 30 volts. Features very low on resistance (8.5mΩ) for high efficiency. Compact 8-pin SO-8 package for surface mounting compatibility.
Wide temperature operation from -55°C up to 150°C. Maximum power dissipation rating of 31.2 watts. Typical gate charge of 19.4 nanocoulombs for fast switching response. Dimensions: 6.25mm length, 5.26mm width, 1.12mm height.
Suitable for industrial, automotive, and consumer electronics applications. Explore the full Vishay MOSFET range and related discrete semiconductor products on EnvMart for your electronic design needs.
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Frequently Asked Questions
The maximum continuous drain current is 58 amperes.
It operates at a maximum drain-source voltage of 30 volts.
The maximum drain-source on resistance (Rds) is 8.5 milliohms, ensuring low conduction losses.
The typical gate charge at Vgs is 19.4 nanocoulombs, which supports fast switching capabilities.
The dimensions are 6.25mm in length, 5.26mm in width, and 1.12mm in height.
It has a maximum power dissipation rating of 31.2 watts.
This MOSFET operates reliably within a temperature range from -55°C to 150°C.
It is housed in a compact 8-pin SO-8 surface mount package.
It is suitable for power switching, load switching, DC-DC converters, and motor control circuits in various electronic applications.
The SIRA14DP-T1-GE3 utilizes an enhancement mode channel for efficient switching.
The maximum gate-source voltage is -16V to +20V.
The country of origin for this MOSFET is India.
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