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Toshiba N-Channel Enhancement MOSFET, 10 A, 800 V, TO-220 Package, 3-Pin TK10A80E,S4X(S

Category MOSFET Brand Toshiba Condition New

Specifications

Country of Origin China
Brand Toshiba
Height 15mm
Length 10mm
Model TK10A80E,S4X(S
Width 4.5mm
Mount Type Through Hole
Series TK
Maximum Operating Temperature 150°C
Package Type TO-220
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 10A
Maximum Drain Source Voltage Vds 800V
Maximum Drain Source Resistance Rds 1Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 50W
Typical Gate Charge Qg @ Vgs 46nC
Maximum Gate Source Voltage Vgs -30, +30V
Forward Voltage Vf -1.7V

Key Features

  • Maximum continuous drain current of 10 A ensures robust performance under load.
  • Supports up to 800 V drain-source voltage for high voltage switching.
  • Packaged in TO-220 with a through-hole mount type for ease of PCB integration.
  • Maximum power dissipation is 50 W, enabling efficient thermal management.
  • Low maximum drain-source resistance of 1 Ω reduces conduction losses.
  • Handles maximum gate-source voltages of -30 to +30 V for reliable gate control.
  • Typical gate charge of 46 nC at gate-source voltage ensures fast switching.
  • Forward voltage of -1.7 V aids in efficient current conduction.

Product Description

Toshiba TK10A80E,S4X(S N-Channel MOSFET transistor is engineered for use in industrial and electronic power switching applications requiring high voltage and current handling capability. It features an enhancement mode channel type and is housed in a robust TO-220 package with 3 pins and through-hole mounting for secure installation.

This MOSFET supports a maximum continuous drain current (Id) of 10 A and a maximum drain-source voltage (Vds) of 800 V, making it suitable for demanding power electronics circuits. The device dissipates up to 50 W of power and has a low maximum drain-source resistance (Rds) of 1 Ω, providing efficient conduction with minimal losses.

The transistor accommodates a maximum gate-source voltage range from -30 V to +30 V, allowing for effective switching control. Its typical gate charge is 46 nC at Vgs, enabling fast switching speeds while maintaining efficient operation. With a forward voltage of -1.7 V, the MOSFET ensures stable current flow across its terminals.

Designed for thermal reliability, the MOSFET operates continuously at temperatures up to 150°C, making it well suited for industrial, commercial, and laboratory electronic equipment. Its compact dimensions (10 mm length, 15 mm height, 4.5 mm width) facilitate easy PCB integration without occupying excessive board space.

Maximum continuous drain current of 10 A ensures high load capacity. High voltage rating of 800 V supports powerful switching. Enhancement channel mode for reliable transistor operation. TO-220 3-pin package with through-hole mount for robust assembly.

Low drain-source resistance to minimize power loss. Wide gate-source voltage range up to ±30 V enhances control flexibility. Fast switching gate charge of 46 nC for efficient performance. Operates up to 150°C, suitable for harsh industrial environments.

Compact size enables versatile application in electronic designs.

This Toshiba MOSFET is ideal for use in power supplies, motor controls, inverters, and amplifier applications within various industrial and electronic sectors. It provides a reliable solution for high voltage and current switching requirements with enhanced durability and efficiency.

Explore more high-performance semiconductors and discrete components in our Electronics & Electricals category for your industrial and commercial projects.

Toshiba N-Channel Enhancement MOSFET, 10 A, 800 V, TO-220 Package, 3-Pin TK10A80E,S4X(S
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Frequently Asked Questions

The maximum continuous drain current for this model is 10 A, ensuring robust performance under load.

This MOSFET supports a maximum drain-source voltage of 800 V, making it suitable for high voltage switching applications.

It is packaged in a TO-220 type with a through-hole mount, facilitating secure installation on PCBs.

The maximum power dissipation for this unit is 50 W, enabling efficient thermal management during operation.

The maximum drain-source resistance for this model is 1 Ω, which helps reduce conduction losses.

The typical gate charge is 46 nC at gate-source voltage, allowing for fast switching capabilities.

This MOSFET can handle a maximum gate-source voltage range of -30 V to +30 V, providing flexibility in control.

The dimensions of this model are 10 mm in length, 15 mm in height, and 4.5 mm in width, making it compact for PCB integration.

The forward voltage for this unit is -1.7 V, which aids in efficient current conduction.

It operates at a maximum temperature of 150°C, suitable for harsh industrial environments.

This model features an N-channel type, which is designed for enhancement mode operation.

It is suitable for applications such as power supplies, motor controls, inverters, and amplifiers within various industrial and electronic sectors.

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