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| Country of Origin | China |
|---|---|
| Brand | Toshiba |
| Height | 15mm |
| Length | 10mm |
| Model | TK10A80E,S4X(S |
| Width | 4.5mm |
| Mount Type | Through Hole |
| Series | TK |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 10A |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 1Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 50W |
| Typical Gate Charge Qg @ Vgs | 46nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | -1.7V |
Toshiba TK10A80E,S4X(S N-Channel MOSFET transistor is engineered for use in industrial and electronic power switching applications requiring high voltage and current handling capability. It features an enhancement mode channel type and is housed in a robust TO-220 package with 3 pins and through-hole mounting for secure installation.
This MOSFET supports a maximum continuous drain current (Id) of 10 A and a maximum drain-source voltage (Vds) of 800 V, making it suitable for demanding power electronics circuits. The device dissipates up to 50 W of power and has a low maximum drain-source resistance (Rds) of 1 Ω, providing efficient conduction with minimal losses.
The transistor accommodates a maximum gate-source voltage range from -30 V to +30 V, allowing for effective switching control. Its typical gate charge is 46 nC at Vgs, enabling fast switching speeds while maintaining efficient operation. With a forward voltage of -1.7 V, the MOSFET ensures stable current flow across its terminals.
Designed for thermal reliability, the MOSFET operates continuously at temperatures up to 150°C, making it well suited for industrial, commercial, and laboratory electronic equipment. Its compact dimensions (10 mm length, 15 mm height, 4.5 mm width) facilitate easy PCB integration without occupying excessive board space.
Maximum continuous drain current of 10 A ensures high load capacity. High voltage rating of 800 V supports powerful switching. Enhancement channel mode for reliable transistor operation. TO-220 3-pin package with through-hole mount for robust assembly.
Low drain-source resistance to minimize power loss. Wide gate-source voltage range up to ±30 V enhances control flexibility. Fast switching gate charge of 46 nC for efficient performance. Operates up to 150°C, suitable for harsh industrial environments.
Compact size enables versatile application in electronic designs.
This Toshiba MOSFET is ideal for use in power supplies, motor controls, inverters, and amplifier applications within various industrial and electronic sectors. It provides a reliable solution for high voltage and current switching requirements with enhanced durability and efficiency.
Explore more high-performance semiconductors and discrete components in our Electronics & Electricals category for your industrial and commercial projects.
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