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Vishay N-Channel MOSFET 21 A 100 V Enhancement Mode 8-Pin SO-8 SI7454DDP-T1-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 1.12mm |
| Length | 6.25mm |
| Model | SI7454DDP-T1-GE3 |
| Width | 5.26mm |
| Mount Type | Surface |
| Series | Si7454DDP |
| Maximum Operating Temperature | 150°C |
| Package Type | SO-8 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 21A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 47mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 29.7W |
| Typical Gate Charge Qg @ Vgs | 12.8nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Supports high current handling with a maximum continuous drain current of 21 A.
- Maximum drain-source voltage rating of 100 V ensures robust performance.
- Enhancement mode channel provides efficient switching characteristics.
- Low drain-source resistance of 47 mΩ minimizes power dissipation.
- Compact SO-8 surface mount package with 8 pins for versatile PCB integration.
- Maximum power dissipation rated at 29.7 W to handle significant loads.
- Wide operating temperature range from -55°C to 150°C ensures reliable use in harsh environments.
- Maximum gate-source voltage is ±20 V, supporting stable gate control.
Product Description
Vishay SI7454DDP-T1-GE3 is a high-performance N-Channel MOSFET semiconductor device designed for discrete semiconductor applications. It features a maximum continuous drain current of 21 A and a drain-source voltage rating of 100 V, housed in a compact 8-pin SO-8 surface-mount package. This enhancement mode MOSFET offers low drain-source resistance of 47 mΩ, enabling efficient power handling with maximum power dissipation of 29.7 W.
The device operates reliably over a wide temperature range from -55°C to 150°C, making it suitable for industrial, commercial, and electronic power management applications requiring high current and voltage tolerance. Its maximum gate-source voltage rating of ±20 V and typical gate charge of 12.8 nC allow precise and fast switching, optimal for power conversion circuits, motor drives, and pulse width modulation (PWM) controllers.
This SO-8 packaged MOSFET facilitates ease of integration on printed circuit boards (PCBs) with its surface mount configuration, providing compactness and high efficiency. The device exhibits a forward voltage of 1.2 V, contributing to lower conduction losses during operation.
Supports high current handling with a maximum continuous drain current of 21 A. Maximum drain-source voltage rating of 100 V ensures robust performance. Enhancement mode channel provides efficient switching characteristics.
Low drain-source resistance of 47 mΩ minimizes power dissipation. Compact SO-8 surface mount package with 8 pins for versatile PCB integration. Maximum power dissipation rated at 29.7 W to handle significant loads. Wide operating temperature range from -55°C to 150°C ensures reliable use in harsh environments.
Maximum gate-source voltage is ±20 V, supporting stable gate control. Typical gate charge is 12.8 nC for fast switching applications. Forward voltage of 1.2 V optimizes conduction efficiency.
This MOSFET is suitable for use in industrial power electronics, embedded systems, manufacturing equipment, and advanced electronic circuit design. Its high efficiency and robust physical and electrical properties make it ideal for applications in automotive electronics, power supplies, and energy management systems.
Explore a wide selection of Vishay semiconductor devices on EnvMart for advanced electronic components and power solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 21 A.
This MOSFET has a maximum drain-source voltage rating of 100 V.
It features a low drain-source resistance of 47 mΩ, which helps minimize power dissipation.
The device is housed in a compact SO-8 surface mount package with 8 pins.
The operating temperature range is from -55°C to 150°C, making it suitable for harsh environments.
This model has a maximum power dissipation rating of 29.7 W.
The maximum gate-source voltage for this MOSFET is ±20 V.
The typical gate charge is 12.8 nC, which supports fast switching applications.
It has a forward voltage of 1.2 V, which contributes to lower conduction losses during operation.
The dimensions are 6.25 mm in length, 5.26 mm in width, and 1.12 mm in height.
This model is suitable for industrial power electronics, embedded systems, and automotive electronics, among other applications.
It features an enhancement mode N-channel design, providing efficient switching characteristics.
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