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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 2.38mm |
| Length | 6.73mm |
| Model | NJD35N04G |
| Mount Type | Surface |
| Series | NJD35N04 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 4A |
| Maximum Collector Emitter Voltage Vceo | 350V |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain hFE | 300 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.5V |
| Maximum Collector Base Voltage VCBO | 700V |
| Maximum Collector Cut-off Current | 250μA |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 45W |
| onsemi NJVMJD122T4G 1 Darlington Transistor NPN, 8 A 100 V HFE | 100, 3-Pin DPAKBrand: onsemi |
| onsemi 1 Darlington Transistor NPN, 4 A 350 V HFE | 300, 3-Pin DPAK |
onsemi NJD35N04G NPN Darlington Transistor is engineered for demanding electronic circuit applications requiring high current and voltage handling capabilities. With a maximum continuous collector current of 4 A and collector emitter voltage of 350 V, this transistor provides excellent switching performance and robustness.
Its 3-pin DPAK surface mount package facilitates compact and efficient PCB layouts, enhancing thermal management and electrical performance. The transistor has a minimum DC current gain (hFE) of 300, making it suitable for amplifying signals in power electronics and control circuits.
Designed to withstand harsh environments, the NJD35N04G operates reliably within a temperature range from -65°C to 150°C. It supports automotive applications, complying with the AEC-Q101 standard, which ensures high quality and enhanced reliability under automotive operating conditions.
The device features a maximum power dissipation of 45 W and a maximum collector base voltage of 700 V, enabling it to be used in high voltage and power conversion applications. Its very low maximum collector emitter saturation voltage (VceSAT) of 1.5 V reduces power losses and improves efficiency in switching circuits.
Compact physical dimensions (2.38 mm height and 6.73 mm length) and a three-pin configuration make the transistor easy to integrate in various industrial, automotive, and electronic product designs. This product is suitable for use in industrial controls, power regulation, motor control, and automotive electronics.
This transistor features a minimum DC current gain (hFE) of 300. Maximum power dissipation is rated at 45 W. NPN polarity transistor for efficient switching. Surface mount TO-252 package design. Operating temperature range from -65°C to 150°C.
Collector base voltage up to 700 V. Collector emitter saturation voltage maximum 1.5 V. Automotive standard AEC-Q101 compliant. Height 2.38 mm and length 6.73 mm. 3-pin count for standard transistor functionality.
Choose onsemi NJD35N04G for high-performance, reliable power transistor needs in electronics manufacturing and industrial design. Explore additional onsemi semiconductor products in our Electronics & Electricals category for comprehensive component solutions.
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