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onsemi NPN Darlington Transistor, 4 A Collector Current, 350 V Collector Emitter Voltage, 3-Pin DPAK NJD35N04G

Category Darlington Transistor Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 2.38mm
Length 6.73mm
Model NJD35N04G
Mount Type Surface
Series NJD35N04
Maximum Operating Temperature 150°C
Package Type TO-252
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Continuous Collector Current Ic 4A
Maximum Collector Emitter Voltage Vceo 350V
Number of Elements per Chip 1
Minimum DC Current Gain hFE 300
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Emitter Saturation Voltage VceSAT 1.5V
Maximum Collector Base Voltage VCBO 700V
Maximum Collector Cut-off Current 250μA
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 45W
onsemi NJVMJD122T4G 1 Darlington Transistor NPN, 8 A 100 V HFE 100, 3-Pin DPAKBrand: onsemi
onsemi 1 Darlington Transistor NPN, 4 A 350 V HFE 300, 3-Pin DPAK

Key Features

  • This transistor features a minimum DC current gain (hFE) of 300.
  • Maximum power dissipation is rated at 45 W, suitable for high power applications.
  • Built with NPN polarity for efficient transistor switching.
  • Designed for surface mount with TO-252 package type for compact mounting.
  • Thermally rated for operation between -65°C to 150°C for robust performance.
  • Maximum collector base voltage is 700 V, supporting high voltage circuits.
  • Maximum collector emitter saturation voltage (VceSAT) is 1.5 V to ensure low losses.
  • Automotive standard compliant (AEC-Q101), suitable for automotive electronic systems.

Product Description

onsemi NJD35N04G NPN Darlington Transistor is engineered for demanding electronic circuit applications requiring high current and voltage handling capabilities. With a maximum continuous collector current of 4 A and collector emitter voltage of 350 V, this transistor provides excellent switching performance and robustness.

Its 3-pin DPAK surface mount package facilitates compact and efficient PCB layouts, enhancing thermal management and electrical performance. The transistor has a minimum DC current gain (hFE) of 300, making it suitable for amplifying signals in power electronics and control circuits.

Designed to withstand harsh environments, the NJD35N04G operates reliably within a temperature range from -65°C to 150°C. It supports automotive applications, complying with the AEC-Q101 standard, which ensures high quality and enhanced reliability under automotive operating conditions.

The device features a maximum power dissipation of 45 W and a maximum collector base voltage of 700 V, enabling it to be used in high voltage and power conversion applications. Its very low maximum collector emitter saturation voltage (VceSAT) of 1.5 V reduces power losses and improves efficiency in switching circuits.

Compact physical dimensions (2.38 mm height and 6.73 mm length) and a three-pin configuration make the transistor easy to integrate in various industrial, automotive, and electronic product designs. This product is suitable for use in industrial controls, power regulation, motor control, and automotive electronics.

This transistor features a minimum DC current gain (hFE) of 300. Maximum power dissipation is rated at 45 W. NPN polarity transistor for efficient switching. Surface mount TO-252 package design. Operating temperature range from -65°C to 150°C.

Collector base voltage up to 700 V. Collector emitter saturation voltage maximum 1.5 V. Automotive standard AEC-Q101 compliant. Height 2.38 mm and length 6.73 mm. 3-pin count for standard transistor functionality.

Choose onsemi NJD35N04G for high-performance, reliable power transistor needs in electronics manufacturing and industrial design. Explore additional onsemi semiconductor products in our Electronics & Electricals category for comprehensive component solutions.

onsemi NPN Darlington Transistor, 4 A Collector Current, 350 V Collector Emitter Voltage, 3-Pin DPAK NJD35N04G
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Frequently Asked Questions

The maximum continuous collector current for this transistor is 4 A.

The NJD35N04G has a maximum collector-emitter voltage rating of 350 V.

It features a minimum DC current gain (hFE) of 300.

The maximum power dissipation for this model is rated at 45 W.

This transistor operates reliably within a temperature range from -65°C to 150°C.

It is designed in a TO-252 package type for surface mounting.

The maximum collector base voltage for this transistor is 700 V.

The maximum collector emitter saturation voltage (VceSAT) is 1.5 V.

This model has a 3-pin configuration.

Yes, it is compliant with the AEC-Q101 automotive standard.

The height is 2.38 mm and the length is 6.73 mm.

It is an NPN polarity transistor, suitable for efficient switching applications.

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