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Vishay P-Channel MOSFET 4.4 A, 40 V Enhancement, 3-Pin SOT-23 SI2319CDS-T1-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 1.02mm |
| Length | 3.04mm |
| Model | SI2319CDS-T1-GE3 |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | Si2319CDS |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 4.4A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 108mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.5W |
| Typical Gate Charge Qg @ Vgs | 13.6nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.2V |
Key Features
- The device is a trench FET power MOSFET with enhancement mode operation.
- Features include a low maximum drain-source resistance of 108 milliohms.
- Maximum power dissipation is rated at 2.5 W to ensure efficient thermal management.
- Operating temperature range is from -55°C minimum to 150°C maximum.
- Typical gate charge at Vgs is 13.6 nC, allowing fast switching performance.
- Maximum gate-source voltage tolerance is between -20 V and +20 V.
- The MOSFET is halogen-free, complying with IEC 61249-2-21 standards.
- Low forward voltage drop of -1.2 V maximizes efficiency.
Product Description
Vishay SI2319CDS-T1-GE3 is a high-performance P-Channel MOSFET designed for efficient switching and load switching applications in electronic and power circuits. With a maximum continuous drain current of 4.4 A and a drain-source voltage rating of 40 V, this MOSFET operates in enhancement mode to provide robust performance in a surface-mount 3-pin SOT-23 package.
This TrenchFET power MOSFET features a low maximum drain-source resistance of 108 milliohms, minimizing conduction losses and improving overall efficiency. The device supports a maximum power dissipation of 2.5 W, making it suitable for moderate power applications while maintaining thermal stability within its operating temperature range of -55°C to 150°C.
The typical gate charge of 13.6 nC at the gate-source voltage facilitates fast switching capabilities, enhancing efficiency in DC/DC converters or load switch designs. It also supports a maximum gate-source voltage range of -20 V to +20 V, providing resilience to voltage spikes. The MOSFET is halogen-free, complying with environmental standards IEC 61249-2-21, and supports RoHS directive compliance, ensuring suitability for modern electronic designs prioritizing ecological safety.
The compact SOT-23 package has precise dimensions of 3.04 mm in length, 1.4 mm in width, and 1.02 mm in height, enabling its use in densely populated PCB layouts. Its low forward voltage drop of -1.2 V further aids in delivering high efficiency in switching operations.
The MOSFET is ideal for load switching applications and DC/DC converters requiring reliable, high switching frequency operation.
It offers enhanced performance for power management and semiconductor switching needs in industrial, consumer electronics, and automotive contexts (non-automotive standard compliant).
Careful testing ensures 100% Rg testing and consistent quality for demanding industrial applications. Explore a wide range of electronic components and semiconductor devices like this Vishay MOSFET at EnvMart for your industrial and commercial project needs.
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Frequently Asked Questions
The maximum continuous drain current for the Vishay SI2319CDS-T1-GE3 is 4.4 A.
This model has a maximum drain-source voltage rating of 40 V.
The MOSFET is packaged in a surface-mount SOT-23 configuration.
The typical gate charge at Vgs is 13.6 nC, which allows for fast switching performance.
The maximum power dissipation is rated at 2.5 W, ensuring efficient thermal management.
The operating temperature range is from -55°C to 150°C.
The maximum gate-source voltage tolerance for this MOSFET is between -20 V and +20 V.
The dimensions of the SI2319CDS-T1-GE3 are 3.04 mm in length, 1.4 mm in width, and 1.02 mm in height.
The maximum drain-source resistance is 108 milliohms, which minimizes conduction losses.
Yes, it is halogen-free and complies with IEC 61249-2-21 standards, supporting RoHS directive compliance.
This MOSFET features a P-channel type, operating in enhancement mode.
It is suitable for load switching applications and DC/DC converters requiring high switching frequency operation.
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