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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1mm |
| Length | 3.1mm |
| Model | NTGS5120PT1G |
| Width | 1.7mm |
| Mount Type | Surface |
| Series | NTGS |
| Maximum Operating Temperature | 150°C |
| Package Type | TSOP |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 2.9A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 142mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.4W |
| Typical Gate Charge Qg @ Vgs | 18.1nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1V |
onsemi NTGS5120PT1G is a high-performance P-Channel power MOSFET designed for electronic components requiring efficient switching and power management. With a maximum continuous drain current of 2.9 A and drain-source voltage of 60 V, this device ensures reliable operation in low to mid-power circuits.
The enhancement mode operation and low 142 mΩ drain-source resistance enhance efficiency and reduce power loss. Packaged in a compact 6-pin TSOP surface mount package with dimensions 3.1 mm length, 1.7 mm width, and 1 mm height, it supports modern PCB layouts and high-density electronic assemblies.
This MOSFET supports a maximum power dissipation of 1.4 W and a wide operating temperature range from -55°C to a maximum of 150°C, making it suitable for diverse industrial, automotive, and commercial applications. It holds compliance with the automotive standard AEC-Q101, ensuring suitability for automotive electronics.
Other features include a gate source voltage rating of -20 to +20 V, a typical gate charge of 18.1 nC facilitating efficient gate switching, and a forward voltage of -1 V. The device enables efficient low voltage switching with a robust design for long-term durability.
onsemi NTGS5120PT1G MOSFETs are suitable for use in power management circuits, automotive electronics, motor control, and general electronic designs requiring reliable P-channel MOSFETs.
Type P channel for enhanced switching performance. Maximum continuous drain current of 2.9 amperes. Drain-source voltage rating is 60 volts for various applications. Surface mount mount type for easy PCB integration. Low drain-source resistance of 142 milliohms.
Enhancement mode channel operation. Maximum power dissipation of 1.4 watts ensures durability. Wide operating temperature range from -55°C to 150°C. Typical gate charge of 18.1 nanocoulombs at Vgs for efficient gate control.
Compliant with automotive standard AEC-Q101 for reliable use in vehicles. Explore more power semiconductor devices and MOSFETs within the Electronics & Electricals category at EnvMart for your industrial, automotive, and laboratory projects.
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