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onsemi P-Channel MOSFET 2.9 A 60 V Enhancement Mode Surface Mount TSOP 6-Pin NTGS5120PT1G

Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1mm
Length 3.1mm
Model NTGS5120PT1G
Width 1.7mm
Mount Type Surface
Series NTGS
Maximum Operating Temperature 150°C
Package Type TSOP
Minimum Operating Temperature -55°C
Pin Count 6
Automotive Standard AEC-Q101
Channel Type Type P
Maximum Continuous Drain Current Id 2.9A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 142mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 1.4W
Typical Gate Charge Qg @ Vgs 18.1nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf -1V

Key Features

  • Type P channel for enhanced switching performance.
  • Maximum continuous drain current of 2.9 amperes.
  • Drain-source voltage rating is 60 volts for various applications.
  • Surface mount mount type for easy PCB integration.
  • Low drain-source resistance of 142 milliohms.
  • Enhancement mode channel operation.
  • Maximum power dissipation of 1.4 watts ensures durability.
  • Wide operating temperature range from -55°C to 150°C.

Product Description

onsemi NTGS5120PT1G is a high-performance P-Channel power MOSFET designed for electronic components requiring efficient switching and power management. With a maximum continuous drain current of 2.9 A and drain-source voltage of 60 V, this device ensures reliable operation in low to mid-power circuits.

The enhancement mode operation and low 142 mΩ drain-source resistance enhance efficiency and reduce power loss. Packaged in a compact 6-pin TSOP surface mount package with dimensions 3.1 mm length, 1.7 mm width, and 1 mm height, it supports modern PCB layouts and high-density electronic assemblies.

This MOSFET supports a maximum power dissipation of 1.4 W and a wide operating temperature range from -55°C to a maximum of 150°C, making it suitable for diverse industrial, automotive, and commercial applications. It holds compliance with the automotive standard AEC-Q101, ensuring suitability for automotive electronics.

Other features include a gate source voltage rating of -20 to +20 V, a typical gate charge of 18.1 nC facilitating efficient gate switching, and a forward voltage of -1 V. The device enables efficient low voltage switching with a robust design for long-term durability.

onsemi NTGS5120PT1G MOSFETs are suitable for use in power management circuits, automotive electronics, motor control, and general electronic designs requiring reliable P-channel MOSFETs.

Type P channel for enhanced switching performance. Maximum continuous drain current of 2.9 amperes. Drain-source voltage rating is 60 volts for various applications. Surface mount mount type for easy PCB integration. Low drain-source resistance of 142 milliohms.

Enhancement mode channel operation. Maximum power dissipation of 1.4 watts ensures durability. Wide operating temperature range from -55°C to 150°C. Typical gate charge of 18.1 nanocoulombs at Vgs for efficient gate control.

Compliant with automotive standard AEC-Q101 for reliable use in vehicles. Explore more power semiconductor devices and MOSFETs within the Electronics & Electricals category at EnvMart for your industrial, automotive, and laboratory projects.

onsemi P-Channel MOSFET 2.9 A 60 V Enhancement Mode Surface Mount TSOP 6-Pin NTGS5120PT1G
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Frequently Asked Questions

The maximum continuous drain current for the NTGS5120PT1G is 2.9 A.

This model has a drain-source voltage rating of 60 V.

The operating temperature range for this MOSFET is from -55°C to 150°C.

It is packaged in a compact 6-pin TSOP surface mount package.

The maximum power dissipation for this model is 1.4 W.

The typical gate charge at Vgs is 18.1 nC.

The drain-source resistance is 142 mΩ.

It complies with the automotive standard AEC-Q101.

The forward voltage for this model is -1 V.

The maximum gate-source voltage rating is -20 to +20 V.

The width is 1.7 mm and the height is 1 mm.

The NTGS5120PT1G is manufactured in India.

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