DiodesZetex P-Channel MOSFET 11 A 40 V Enhancement Mode 8-Pin PowerDI5060 DMP4015SPS-13

The DiodesZetex DMP4015SPS-13 is a high-performance P-Channel MOSFET designed for efficient power switching in a variety of electronic applications. Rated at 11 A maximum continuous drain current and a drain-source voltage of 40 V, this enhancement mode device is well-suited for power-sensitive circuits requiring reliable switching and stability.

Packaged in an 8-Pin PowerDI5060 surface mount format, the MOSFET facilitates compact and easy installation on printed circuit boards used in industrial power electronics, automotive systems, and consumer electronics.

The device features a low maximum drain source resistance of 15 milliohms which reduces conduction losses, improving overall efficiency. Its maximum power dissipation is 2.1 W while safely operating up to 150°C, making it dependable for high-temperature environments.

The typical gate charge of 47.5 nanocoulombs at the gate-source voltage allows for optimized gate drive performance, supporting quick switching and reduced energy consumption. It supports a gate-source voltage range from -25 V to +25 V to ensure safe operation under various electrical conditions.

Physical dimensions of the MOSFET are 5.1 mm in length, 6 mm in width, and 1.1 mm in height, making it suitable for space-constrained applications.

This component complies with the automotive standard AEC-Q101, guaranteeing robustness and reliability for automotive electronics and other demanding applications. It is manufactured in China under stringent quality standards.

Common industrial and commercial use cases include power management in automotive electronics, industrial control systems, and consumer electronic devices. This MOSFET is ideal for switching, load management, and power regulation tasks where efficiency and small footprint are critical.

Explore more electronic components and discrete semiconductors in the MOSFET category at EnvMart to find complementary components for your projects. This MOSFET features an enhancement channel mode for efficient switching performance.

It is mounted on a Surface Mount 8-Pin PowerDI5060 package for compact integration. The maximum drain source resistance is 15 milliohms ensuring low conduction losses. The device can dissipate up to 2.1 watts of power with a maximum operating temperature of 150 degrees Celsius.

Typical gate charge at gate-source voltage is 47.5 nanocoulombs optimizing gate drive efficiency. Safe gate-source voltage range is from -25 to +25 volts. Operating temperature range spans from -55 up to 150 degrees Celsius, supporting diverse environments.

Physical dimensions of the MOSFET are 5.1 mm length, 6 mm width, and 1.1 mm height. This product complies with automotive standard AEC-Q101, assuring quality for automotive applications. Manufactured in China, it is suitable for industrial, automotive, and power management uses.

EnvMart offers an extensive selection of semiconductor components for industrial and commercial projects. Browse our collection to find high-quality MOSFETs tailored to your technical requirements.