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DiodesZetex N-Channel MOSFET, 380mA, 60V, Enhancement Mode, 3-Pin SOT-23 Package 2N7002K-7

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DiodesZetex N-Channel MOSFET, 380mA, 60V, Enhancement Mode, 3-Pin SOT-23 Package 2N7002K-7

Name: DiodesZetex N-Channel MOSFET, 380mA, 60V, Enhancement Mode, 3-Pin SOT-23 Package 2N7002K-7
Brand: DiodesZetex
SKU: 367495
Price: 0.05 USD
Availability: InStock

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Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin	China
Brand	DiodesZetex
Height	1.1mm
Length	3mm
Model	2N7002K-7
Width	1.4mm
Mount Type	Surface
Series	2N7002
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Automotive Standard	AEC-Q101
Channel Type	N
Maximum Continuous Drain Current Id	380mA
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	3Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	540mW
Typical Gate Charge Qg @ Vgs	0.3nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	-1.2V

Key Features

This enhancement mode MOSFET features a low 3 ohms maximum drain-source resistance.
Surface mount package enables easy PCB integration in electronic designs.
Supports operating temperatures from -55°C up to 150°C for robust performance.
Offers a typical gate charge of 0.3nC at gate-source voltage, enabling fast switching.
Max gate-source voltage rating is -20V to +20V ensuring device protection.
Maximum power dissipation is rated at 540mW suitable for low power applications.
Compact dimensions of 3mm length, 1.4mm width, and 1.1mm height optimize space savings.

Product Description

DiodesZetex 2N7002K-7 is a reliable N-Channel Enhancement Mode MOSFET designed for discrete semiconductor applications requiring efficient switching and amplification. It supports a maximum continuous drain current of 380mA and a drain-source voltage rating of 60V. Packaged in a 3-pin SOT-23 surface mount package, this device is ideal for compact electronic circuit boards.

This MOSFET operates reliably over a wide temperature range from -55°C to 150°C, making it suitable for industrial and commercial electronic systems. The device features a low maximum drain-source resistance of 3 ohms, which helps reduce conduction losses.

The typical gate charge of 0.3nC at specified gate voltages ensures swift switching performance. The maximum gate-source voltage tolerance of -20V to +20V enhances device protection in various operational scenarios. Its power dissipation rating of 540mW accommodates moderate power handling in circuit designs.

Physical dimensions are 3mm in length, 1.4mm width, and 1.1mm height, allowing integration into dense component layouts. The device conforms to automotive standard AEC-Q101 indicating suitability for automotive electronics applications.

This MOSFET is manufactured in China and is offered in new condition. It is suitable for use in electronics, power management, industrial control systems, and embedded applications requiring low voltage switching components.

This enhancement mode MOSFET features a low 3 ohms maximum drain-source resistance. Surface mount package enables easy PCB integration in electronic designs. Supports operating temperatures from -55°C up to 150°C for robust performance.

Offers a typical gate charge of 0.3nC at gate-source voltage, enabling fast switching. Max gate-source voltage rating is -20V to +20V ensuring device protection. Maximum power dissipation is rated at 540mW suitable for low power applications.

Compact dimensions of 3mm length, 1.4mm width, and 1.1mm height optimize space savings. Explore the Electronics & Electricals category at EnvMart for more high-quality MOSFET and semiconductor solutions.