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onsemi N-Channel Field Stop IGBT 80 A 600 V, 3-Pin TO-247 Through Hole FGH40N60SFDTU
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Model | FGH40N60SFDTU |
| Mount Type | Through Hole |
| Series | Field Stop |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 80A |
| Maximum Collector Emitter Voltage Vceo | 600V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.3V |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Power Dissipation Pd | 290W |
| Maximum Gate Emitter Voltage VGEO | ±20 V |
| onsemi FGH40T100SMD IGBT, 80 A 1000 V, 3-Pin TO-247, Through HoleBrand | ON Semiconductor |
Key Features
- This IGBT features a 3-pin TO-247 through-hole package for easy mounting.
- It offers a maximum power dissipation of 290 W ensuring robust operation under high loads.
- The device supports a maximum gate emitter voltage of ±20 V and switching speed of 25 ns for efficient control.
- Operating temperature range is wide, from -55°C to 150°C, suitable for demanding industrial environments.
- Designed to meet RoHS compliance and conforms to Automotive Standard AEC-Q101, ensuring reliability.
- The maximum collector emitter saturation voltage (VceSAT) is low at 2.3 V, improving efficiency.
- This field stop IGBT combines MOSFET gate-drive features with bipolar transistor power capabilities.
Product Description
onsemi FGH40N60SFDTU is an N-Channel Field Stop Insulated Gate Bipolar Transistor (IGBT) capable of handling 80 A maximum continuous collector current and 600 V maximum collector emitter voltage. It is packaged in a 3-pin TO-247 through-hole mounting type, designed for high efficiency and fast switching with a 25 ns switching speed and a maximum power dissipation rating of 290 W.
This device supports a gate emitter voltage tolerance of ±20 V and features a low collector emitter saturation voltage of 2.3 V, enhancing power efficiency. Its extended operating temperature range from -55°C up to 150°C makes it ideal for industrial, automotive, and power management applications.
The IGBT integrates the simple drive characteristics of MOSFETs with the high-current and low-saturation voltage capabilities of bipolar transistors, making it versatile for use in industrial power electronics and motor drives.
This IGBT is well-suited for power conversion, motor control, and other industrial semiconductor applications. The robust TO-247 package enables reliable through-hole mounting and effective heat dissipation. Ideal for use in automotive power modules, industrial inverters, and power supplies.
Field stop design provides improved performance over conventional IGBTs. Compliance with automotive standards ensures suitability for vehicle electronics.
Explore more high-quality semiconductor products like this within EnvMart's Electronics & Electricals category for Discrete Semiconductors and IGBTs to meet your electronic design and manufacturing requirements.
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Frequently Asked Questions
The maximum continuous collector current for the onsemi FGH40N60SFDTU is 80 A.
It can handle a maximum collector emitter voltage of 600 V.
The maximum power dissipation rating is 290 W, allowing for robust operation under high loads.
This model features a switching speed of 25 ns, facilitating efficient control.
The operating temperature range is from -55°C to 150°C, making it suitable for demanding environments.
It is designed for through-hole mounting in a 3-pin TO-247 package.
The maximum gate emitter voltage is ±20 V, allowing for flexible control.
The maximum collector emitter saturation voltage (VceSAT) is low at 2.3 V, enhancing efficiency.
Yes, it is designed to meet RoHS compliance, ensuring it adheres to environmental standards.
It conforms to Automotive Standard AEC-Q101, ensuring reliability for vehicle applications.
This IGBT is well-suited for power conversion, motor control, and other industrial semiconductor applications.
It features an N-channel design, combining MOSFET gate-drive characteristics with bipolar transistor capabilities.
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