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Toshiba N-Channel Enhancement MOSFET 50 mA 20 V 3-Pin USM 2SK1829(TE85L,F)

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Toshiba N-Channel Enhancement MOSFET 50 mA 20 V 3-Pin USM 2SK1829(TE85L,F)

Name: Toshiba N-Channel Enhancement MOSFET 50 mA 20 V 3-Pin USM 2SK1829(TE85L,F)
Brand: Toshiba
SKU: 409204
Price: 0.2 USD
Availability: InStock

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Category MOSFET Brand Toshiba Condition New

Specifications

Country of Origin	India
Brand	Toshiba
Height	900μm
Length	2mm
Model	2SK1829(TE85L,F)
Width	1.25mm
Mount Type	Surface
Series	2SK
Maximum Operating Temperature	150°C
Package Type	USM
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	50mA
Maximum Drain Source Voltage Vds	20V
Maximum Drain Source Resistance Rds	40Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	100mW
Maximum Gate Source Voltage Vgs	-10, +10V

Key Features

This MOSFET features a low drain-to-source resistance of 40 ohms for efficient switching performance.
It has a compact package size measuring 2 mm in length, 1.25 mm in width, and 900 micrometers in height.
The device operates within a temperature range of -55°C to 150°C, suitable for industrial applications.
Its maximum power dissipation is rated at 100 mW, ensuring reliability in low-power circuits.
The enhancement mode channel type provides normally-off operation for safety and energy efficiency.
This component is surface mount compatible, facilitating automated PCB assembly.
It includes 3 pins configured in a USM package style, commonly used in electronic circuit design.
The product does not carry automotive or other specific industry standards approvals.

Product Description

The Toshiba 2SK1829(TE85L,F) N-Channel Enhancement MOSFET is a discrete semiconductor designed for applications requiring low current and voltage switching capabilities. It features a maximum continuous drain current of 50 mA and a maximum drain-source voltage of 20 V with a low Rds(on) of 40 Ω, which ensures efficient conduction and low heat dissipation.

This MOSFET is packaged in a compact 3-pin USM surface mount package measuring 2 mm in length, 1.25 mm width, and 900 μm height, making it suitable for modern high-density electronics. It supports operation across a broad temperature range from -55°C to 150°C, offering robustness in industrial and consumer electronics environments.

The device is an enhancement mode transistor with a gate-source voltage rating of -10 V to +10 V, enabling easy gate drive and fast switching. Its maximum power dissipation is 100 mW, which aligns with low-power circuit requirements such as signal switching, amplification, and power management in embedded systems.

Typical use cases include electronic design, manufacturing, and repair of consumer electronics, telecommunications devices, and instrumentation. While this component does not have automotive standard certifications, it remains reliable for many industrial and laboratory applications requiring high-quality MOSFET components.

This 3-pin USM MOSFET offers surface mount compatibility for efficient PCB design. Low Rds(on) at 40 Ω enhances electrical efficiency and reduces heat generation. Wide operating temperature range ensures performance stability across environments.

Rated for 100 mW power dissipation suitable for small current switching applications. Compact dimensions support space-constrained electronic assembly. The enhancement mode channel type provides normally-off operation enhancing circuit safety.

Reliable for applications in industrial, consumer electronics, and communication systems. Explore more Toshiba electronic components and MOSFET devices in our Semiconductor category at EnvMart for quality solutions tailored to your technical needs.