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Infineon CoolMOS C3 N-Channel MOSFET 4 A 800 V Enhancement Mode 3-Pin TO-220 SPP04N80C3XKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 15.95mm |
| Length | 10.36mm |
| Model | SPP04N80C3XKSA1 |
| Width | 4.57mm |
| Mount Type | Through Hole |
| Series | CoolMOS C3 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 4A |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 1.3Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 63W |
| Typical Gate Charge Qg @ Vgs | 23nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.2V |
Key Features
- Provides a maximum continuous drain current of 4 amperes.
- Supports maximum drain-source voltage of 800 volts.
- Packaged in TO-220 for effective heat dissipation and easy mounting.
- Features low drain-source resistance of 1.3 ohms improving efficiency.
- Operates over a wide temperature range from -55°C to 150°C.
- Maximum power dissipation rated at 63 watts.
- Typical gate charge of 23 nanocoulombs for faster switching performance.
- Maximum gate-source voltage tolerance is -30 to +30 volts.
Product Description
Infineon's SPP04N80C3XKSA1 CoolMOS™ C3 Power MOSFET is a high-performance N-channel transistor designed for applications requiring efficient switching and power handling. Featuring a maximum continuous drain current of 4 A and a high drain-source voltage rating of 800 V, it is ideally suited for power electronics in industrial and consumer electronics.
The device comes in a robust 3-pin TO-220 package, allowing through-hole mounting and effective heat dissipation for reliable operation at powers up to 63 W. Its low maximum drain-source resistance (Rds) of 1.3 Ω enables reduced conduction losses and enhanced efficiency.
Designed to operate within a broad temperature range (-55°C to 150°C), the SPP04N80C3XKSA1 supports industrial-grade thermal performance. The typical gate charge of 23 nC ensures fast switching, and protection against gate voltage surges up to ±30 V adds device robustness.
This MOSFET is well suited for use in power supplies, motor drives, and switching circuits in industrial, commercial, and laboratory environments requiring reliable semiconductor switching components.
Maximum continuous drain current: 4A. Maximum drain-source voltage: 800V. Package type: TO-220 for reliable mounting. Maximum power dissipation: 63W. Operating temperature range: -55°C to 150°C. Gate charge at Vgs: 23nC typical.
Maximum gate-source voltage: -30V to +30V. Low Rds(on): 1.3Ω for efficient conduction. Compact package dimensions enable easy integration.
Infineon's CoolMOS C3 family is known for reliable performance, energy efficiency, and optimized power density, making the SPP04N80C3XKSA1 an excellent choice for designers in the electronics and power management sectors.
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Frequently Asked Questions
The maximum continuous drain current for the SPP04N80C3XKSA1 is 4 amperes.
This model supports a maximum drain-source voltage of 800 volts.
It comes in a TO-220 package, which allows for effective heat dissipation and easy mounting.
The maximum power dissipation rated for the SPP04N80C3XKSA1 is 63 watts.
It operates over a wide temperature range from -55°C to 150°C.
The typical gate charge at Vgs for this MOSFET is 23 nanocoulombs.
The maximum gate-source voltage tolerance for this device is -30 to +30 volts.
The maximum drain-source resistance (Rds) is 1.3 ohms, which improves efficiency.
The dimensions of the SPP04N80C3XKSA1 are 10.36 mm in length, 4.57 mm in width, and 15.95 mm in height.
This model has a pin count of 3, suitable for through-hole mounting.
It is well suited for power supplies, motor drives, and switching circuits in industrial, commercial, and laboratory environments.
The SPP04N80C3XKSA1 features an N-channel enhancement mode design.
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