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DiodesZetex P-Channel MOSFET, 40 V, 9.9 A Continuous Drain Current, 3-Pin TO-252 Surface Mount Enhancement Mode ZXMP4A16KTC

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 2.39mm
Length 6.73mm
Model ZXMP4A16KTC
Width 6.22mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type TO-252
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type Type P
Maximum Continuous Drain Current Id 9.9A
Maximum Drain Source Voltage Vds 40V
Maximum Drain Source Resistance Rds 100mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 9.5W
Typical Gate Charge Qg @ Vgs 29.6nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf -0.89V

Key Features

  • This MOSFET operates in enhancement mode providing reliable switching performance.
  • It features a maximum power dissipation of 9.5 W suited for power management applications.
  • The device supports a maximum gate-source voltage range of -20 to +20 volts.
  • Operating temperature ranges from -55°C minimum to 150°C maximum ensure robust performance under diverse conditions.
  • Its compact dimensions of 6.73 mm length, 6.22 mm width, and 2.39 mm height facilitate space-efficient board layouts.
  • The typical gate charge of 29.6 nC at Vgs supports efficient gate drive requirements.
  • The 3-pin TO-252 package provides surface mount capability for modern electronic designs.
  • The device has a maximum drain-source resistance of 100 milliohms, optimizing conduction efficiency.

Product Description

DiodesZetex ZXMP4A16KTC is a P-Channel MOSFET designed for efficient power switching and management in electronic circuits. It supports a maximum continuous drain current of 9.9 amperes and can handle drain-source voltages up to 40 volts.

The device is housed in a TO-252 package with surface mount capability, allowing for compact and reliable PC board assembly. Its enhancement mode operation ensures effective control and switching performance in various industrial and commercial applications.

This MOSFET supports a maximum power dissipation of 9.5 watts, making it suitable for moderate power loads in embedded systems, power supplies, and switching regulators. The gate-source voltage rating of -20 volts to +20 volts provides flexibility in gate drive circuitry design.

Operating temperature ranges from -55°C to 150°C guarantee stable performance across extended temperature conditions, suitable for use in HVAC, industrial automation, and automotive electronics (not automotive standard certified but robust for general use).

Compact physical dimensions of 6.73 mm length by 6.22 mm width and a height of 2.39 mm allow for efficient space utilization on densely packed circuit boards. The typical gate charge value of 29.6 nanocoulombs at the specified gate voltage indicates responsive switching characteristics.

9.9 A continuous drain current for high load applications. 40 V drain-source voltage rating suitable for low voltage power circuits. Enhancement mode operation for reliable switching. Surface mount TO-252 package for easy assembly.

Wide operating temperature range from -55°C to 150°C. Maximum power dissipation of 9.5 W for medium power handling. Maximum drain-source resistance of 100 mΩ for efficient conduction. Typical gate charge 29.6 nC supports efficient gate drive.

This DiodesZetex MOSFET is ideal for industrial electronics, power management, construction equipment controls, HVAC systems, and other applications requiring dependable P-Channel MOSFETs. Explore more MOSFETs and semiconductor components in our Electronics & Electricals category at EnvMart.

DiodesZetex P-Channel MOSFET, 40 V, 9.9 A Continuous Drain Current, 3-Pin TO-252 Surface Mount Enhancement Mode ZXMP4A16KTC
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Frequently Asked Questions

The maximum continuous drain current for this model is 9.9 amperes.

This MOSFET supports a maximum drain-source voltage of 40 volts.

It is housed in a TO-252 package, which allows for surface mount capability.

The operating temperature ranges from -55°C to 150°C.

The maximum power dissipation is 9.5 watts, suitable for moderate power applications.

The typical gate charge is 29.6 nanocoulombs at the specified gate voltage.

It has dimensions of 6.73 mm in length, 6.22 mm in width, and 2.39 mm in height.

The maximum gate-source voltage range is from -20 to +20 volts.

The maximum drain-source resistance is 100 milliohms, optimizing conduction efficiency.

This model features a P-channel type channel, operating in enhancement mode.

It is suitable for power management applications, including embedded systems and power supplies.

The TO-252 package has a total of 3 pins.

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