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DiodesZetex N-Channel MOSFET 5.8 A 30 V Enhancement 3-Pin SOT-23 DMN3404L-7

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1.1mm
Length 3mm
Model DMN3404L-7
Width 1.4mm
Mount Type Surface
Series DMN
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 5.8A
Maximum Drain Source Voltage Vds 30V
Maximum Drain Source Resistance Rds 42mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 720mW
Typical Gate Charge Qg @ Vgs 9.2nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1V

Key Features

  • Supports a maximum continuous drain current of 5.8 A facilitating high current applications.
  • Operates at a maximum drain-source voltage of 30 V, suitable for low voltage circuits.
  • Features a compact SOT-23 3-pin surface-mount package ensuring easy PCB integration.
  • Enhancement mode MOSFET providing switch control in electronic circuitry.
  • Maximum gate-source voltage rating of -20 V to +20 V for versatile gate drive.
  • Maximum power dissipation rating of 720 mW to handle power requirements safely.
  • Operating temperature range from -55°C to 150°C ensures reliability in diverse environments.
  • Automotive standard compliant (AEC-Q101) suitable for automotive and industrial applications.

Product Description

DiodesZetex DMN3404L-7 is an N-Channel MOSFET designed to deliver high current performance with a maximum continuous drain current of 5.8 A and a drain-source voltage rating of 30 V. Packaged in a compact 3-pin SOT-23 surface mount format, this enhancement mode transistor is ideal for space-constrained electronic applications requiring efficient switching and amplification.

This device supports a wide gate-source voltage range from -20 V to +20 V, ensuring compatibility with various driver circuits. With a maximum power dissipation of 720 mW and a temperature operating range extending from -55°C to 150°C, it is engineered for stable operation under demanding industrial and automotive conditions. The MOSFET is certified to meet the AEC-Q101 automotive qualification standard, underscoring its robustness for automotive electronics use.

The forward voltage is typically 1 V with a low maximum drain-source resistance of 42 milliohms enhancing efficiency and reduced losses. The gate charge is minimized to 9.2 nC at the rated gate voltage, which allows rapid switching performance beneficial for power management.

Its dimensions are small and precise with a length of 3 mm, width of 1.4 mm, and height of 1.1 mm, making integration into compact PCB designs straightforward. These specifications make the DMN3404L-7 MOSFET suitable for diverse applications including power switching, amplification, automotive electronics, and industrial control systems.

Supports continuous high current up to 5.8 A for efficient power handling. Low drain-source on-resistance minimizes power loss and heat dissipation. Compact SOT-23 surface mount package optimizes PCB space utilization. Wide operating temperature tolerance for reliable performance in harsh environments.

Automotive standard AEC-Q101 certified for automotive-grade application confidence. Enhancement-mode operation facilitates controlled switching in electronic circuits. Explore the full range of DiodesZetex MOSFETs at EnvMart to find components suited for your electronic design and manufacturing needs.

DiodesZetex N-Channel MOSFET 5.8 A 30 V Enhancement 3-Pin SOT-23 DMN3404L-7
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Frequently Asked Questions

The DMN3404L-7 supports a maximum continuous drain current of 5.8 A, making it suitable for high current applications.

It operates at a maximum drain-source voltage of 30 V, which is suitable for low voltage circuits.

This model is packaged in a compact 3-pin SOT-23 surface mount format, facilitating easy PCB integration.

The operating temperature range extends from -55°C to 150°C, ensuring reliability in diverse environments.

It has a maximum power dissipation rating of 720 mW, allowing it to handle power requirements safely.

The maximum gate-source voltage rating is -20 V to +20 V, providing versatility for various gate drive applications.

The typical gate charge at the rated gate voltage is 9.2 nC, which allows for rapid switching performance.

It features a low maximum drain-source resistance of 42 milliohms, which enhances efficiency and reduces losses.

Yes, it is certified to meet the AEC-Q101 automotive qualification standard, making it suitable for automotive applications.

The dimensions are 3 mm in length, 1.4 mm in width, and 1.1 mm in height, making it suitable for compact PCB designs.

It is an N-Channel MOSFET, designed for enhancement mode operation, facilitating controlled switching in electronic circuits.

This model is suitable for diverse applications including power switching, amplification, automotive electronics, and industrial control systems.

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