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DiodesZetex P-Channel MOSFET 3.3 A, 20 V Enhancement, 3-Pin SOT-23 DMP2160U-7

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DiodesZetex P-Channel MOSFET 3.3 A, 20 V Enhancement, 3-Pin SOT-23 DMP2160U-7

Name: DiodesZetex P-Channel MOSFET 3.3 A, 20 V Enhancement, 3-Pin SOT-23 DMP2160U-7
Brand: DiodesZetex
SKU: 363612
Price: 0.12 USD
Availability: InStock

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Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin	China
Brand	DiodesZetex
Height	1.1mm
Length	3mm
Model	DMP2160U-7
Width	1.4mm
Mount Type	Surface
Series	DMP2160U
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Automotive Standard	AEC-Q101
Channel Type	Type P
Maximum Continuous Drain Current Id	3.3A
Maximum Drain Source Voltage Vds	20V
Maximum Drain Source Resistance Rds	140mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	1.4W
Typical Gate Charge Qg @ Vgs	6.5nC
Maximum Gate Source Voltage Vgs	-12, +12V
Forward Voltage Vf	-1.2V

Key Features

This MOSFET features an enhancement mode channel with low drain-source resistance of 140 mΩ.
It comes in a compact 3-pin SOT-23 surface mount package ideal for space-constrained designs.
Maximum power dissipation is rated at 1.4 W, supporting robust operation up to 150°C.
The device supports a typical gate charge of 6.5 nC at specified gate-source voltage.
Operating temperature range spans from −55°C to 150°C, suitable for diverse industrial applications.
Its maximum gate-source voltage is ±12 V, enabling stable gate control.
The forward voltage is specified as −1.2 V, optimizing power efficiency.
The MOSFET conforms to automotive quality standard AEC-Q101, assuring reliability.

Product Description

DiodesZetex DMP2160U-7 is a high-performance P-Channel MOSFET designed for switching and amplification in electronic circuits. It features a maximum continuous drain current of 3.3 A and withstands a maximum drain-source voltage of 20 V. Packaged in a 3-pin SOT-23 surface mount package, this device is optimized for compact circuit designs where space and thermal management are critical.

Operating in enhancement mode, the MOSFET exhibits a low maximum drain-source resistance of 140 mΩ, which ensures minimal power loss and efficient operation. It supports a typical gate charge of 6.5 nC at the specified gate-source voltage of ±12 V, delivering fast switching speeds suitable for diverse electronic and industrial applications.

The component is capable of dissipating up to 1.4 W of power, and its operational temperature range from -55°C to 150°C makes it suitable for demanding environments including automotive electronics, industrial systems, and consumer devices.

The dimensions of 3 mm length, 1.4 mm width, and 1.1 mm height allow for integration in dense circuit boards. Compliance with automotive standard AEC-Q101 further endorses its reliability under harsh automotive conditions.

This MOSFET supports efficient switching applications with minimal energy loss. Compact SOT-23 package makes it ideal for tight spaces in PCB layouts. Wide operating temperature range supports industrial and automotive use cases.

Low gate charge and resistance enable fast switching and enhanced performance. Designed with automotive-grade quality standard AEC-Q101. Forward voltage is optimized at -1.2 V for better efficiency. Robust construction allows operation up to 150°C temperature.

Offers surface mount compatibility for modern electronics manufacturing.

This MOSFET is widely used in industrial, automotive, consumer electronics, and power management applications. Its reliable performance and compact form factor make it a practical choice for engineers and designers. For more industrial-grade electronic components and solutions, explore the comprehensive catalog at EnvMart.