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DiodesZetex Silicon Junction Switching Diode 3-Pin SOT-23 400 mA 200 V 350 mW BAV23S-7-F

Category Switching Diodes Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 1.1mm
Length 3mm
Model BAV23S-7-F
Width 1.4mm
Mount Type Surface
Series BAV23A/C/S
Maximum Operating Temperature 150°C
Package Type SOT-23
Sub Type Silicon Junction
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Power Dissipation Pd 350mW
Diode Configuration Series
Peak Non-Repetitive Forward Surge Current Ifsm 9A
Maximum Forward Voltage Vf 1.25V
Peak Reverse Recovery Time trr 50ns
Maximum Forward Current If 400mA
Maximum Peak Reverse Repetitive Voltage Vrrm 200V

Key Features

  • Designed for surface mount applications with a compact SOT-23 package.
  • Maximum forward current rating of 400 milliamps.
  • Can withstand peak repetitive reverse voltage of up to 200 volts.
  • Power dissipation capability rated at 350 milliwatts.
  • Fast switching speed with peak reverse recovery time of 50 nanoseconds.
  • Operating temperature range from -65°C to 150°C for reliable performance.
  • Peak non-repetitive forward surge current rated up to 9 amps.
  • Physical dimensions include length of 3 mm, width of 1.4 mm, and height of 1.1 mm.

Product Description

DiodesZetex BAV23S-7-F is a high-quality silicon junction switching diode designed for efficient surface mount applications in industrial and electronic circuits. Packaged in a small SOT-23 3-pin form factor, this diode supports a maximum forward current of 400 milliamps and a peak reverse voltage of 200 volts, making it ideal for fast switching and signal processing tasks.

This diode features a maximum power dissipation of 350 milliwatts and a fast peak reverse recovery time of 50 nanoseconds, enhancing its performance in switching operations. It operates reliably across a wide temperature range from -65°C to 150°C, suitable for demanding industrial, automotive (non-certified), and commercial electronics environments.

The physical dimensions are compact with a length of 3 mm, width of 1.4 mm, and height of 1.1 mm, ensuring space-saving PCB layouts. It is rated for peak non-repetitive forward surge currents up to 9 amps, providing robustness against transient current spikes.

Designed for surface mount technology with SOT-23 package. Silicon junction type for stable diode characteristics. Supports a continuous forward current of 400 mA. Peak reverse voltage capability of 200 V ensures blocking ability.

350 mW maximum power dissipation for reliable thermal performance. Fast switching capability with 50 ns peak reverse recovery time. Wide operating temperature range from -65°C to 150°C. 3-pin configuration suitable for discrete semiconductor applications.

Compact dimensions to optimize PCB space utilization.

This diode is cost-effective and widely used in electronic components for power and signal switching in various industrial, manufacturing, HVAC, and laboratory equipment applications. It is a new product made in China and complies with standard quality requirements for electronic semiconductors. EnvMart offers this diode as part of its extensive discrete semiconductor catalog.

Explore more products in our Switching Diodes category.

DiodesZetex Silicon Junction Switching Diode 3-Pin SOT-23 400 mA 200 V 350 mW BAV23S-7-F
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Frequently Asked Questions

The maximum forward current rating of this diode is 400 milliamps.

This model can withstand a peak reverse voltage of up to 200 volts.

It has a maximum power dissipation capability rated at 350 milliwatts.

The peak reverse recovery time is 50 nanoseconds, allowing for fast switching operations.

The physical dimensions are 3 mm in length, 1.4 mm in width, and 1.1 mm in height.

It operates reliably across a temperature range from -65°C to 150°C.

This diode is packaged in a compact SOT-23 3-pin form factor, suitable for surface mount applications.

It is rated for peak non-repetitive forward surge currents up to 9 amps.

The diode configuration is series, making it suitable for various applications.

The maximum forward voltage is rated at 1.25 volts.

It is widely used in electronic components for power and signal switching in industrial, manufacturing, HVAC, and laboratory equipment applications.

The country of origin for this diode is China.

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