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DiodesZetex Silicon Junction Switching Diode, Single, 1 A, 2-Pin SMA Package, 400 V, 25ns trr ES1G-13-F
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 2.1mm |
| Length | 4.6mm |
| Model | ES1G-13-F |
| Width | 2.92mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SMA |
| Sub Type | Silicon Junction |
| Minimum Operating Temperature | -55°C |
| Pin Count | 2 |
| Diode Configuration | Single |
| Peak Non-Repetitive Forward Surge Current Ifsm | 30A |
| Maximum Forward Voltage Vf | 1.25V |
| Peak Reverse Recovery Time trr | 25ns |
| Maximum Forward Current If | 1A |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 400V |
Key Features
- The diode supports a maximum peak reverse repetitive voltage of 400 V.
- Maximum forward voltage is 1.25 V ensuring efficient signal rectification.
- Peak reverse recovery time is 25 ns for fast switching applications.
- Operating temperature ranges from -55°C to 150°C for reliable performance under harsh conditions.
- Features a durable 2-pin SMA surface mount package with compact dimensions of 4.6mm length, 2.92mm width, and 2.1mm height.
- Capable of peak non-repetitive forward surge current up to 30 A.
- Designed for industrial, electronic assemblies, and power rectification applications.
Product Description
DiodesZetex ES1G-13-F is a silicon junction switching diode configured as a single diode with a maximum forward current of 1 A. It features a compact 2-pin Surface Mount Assembly (SMA) package, ideal for surface mounting on PCBs in electronic circuits requiring efficient switching and rectification.
This diode offers a maximum peak reverse repetitive voltage of 400 V and a maximum forward voltage drop of 1.25 V, balancing performance and energy efficiency. Its fast switching capability is highlighted by a peak reverse recovery time of 25 ns, making it suitable for high-speed switching circuits.
Designed to operate reliably in a wide temperature range from -55°C to 150°C, the diode withstands challenging industrial environments and temperature fluctuations. The package dimensions are 4.6 mm in length, 2.92 mm in width, and 2.1 mm in height, providing a compact footprint for space-constrained designs.
Furthermore, this diode supports a peak non-repetitive forward surge current of 30 A, enhancing its capability to manage transient surges during circuit operation. It is a non-automotive standard diode without special certifications, conforming to common industrial semiconductor requirements.
Common uses include switching, rectification, and signal processing within electronic components, power supplies, and discrete semiconductor applications. The diode is designed for integration in manufacturing, industrial electronics, and electronics assembly workflows.
The diode supports a maximum peak reverse repetitive voltage of 400 V. Maximum forward voltage is 1.25 V ensuring efficient signal rectification. Peak reverse recovery time is 25 ns for fast switching applications. Operating temperature ranges from -55°C to 150°C for reliable performance under harsh conditions.
Features a durable 2-pin SMA surface mount package with compact dimensions of 4.6mm length, 2.92mm width, and 2.1mm height. Capable of peak non-repetitive forward surge current up to 30 A. Designed for industrial, electronic assemblies, and power rectification applications.
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Frequently Asked Questions
The maximum peak reverse repetitive voltage of this diode is 400 V.
The maximum forward current rating for this model is 1 A.
The dimensions of the SMA package are 4.6 mm in length, 2.92 mm in width, and 2.1 mm in height.
The peak reverse recovery time for this diode is 25 ns, suitable for fast switching applications.
This diode operates reliably within a temperature range of -55°C to 150°C.
The maximum forward voltage drop for this model is 1.25 V.
This diode can handle a peak non-repetitive forward surge current of up to 30 A.
The diode is designed for surface mounting, utilizing an SMA package.
The configuration of this diode is a single diode.
This diode is designed for use in industrial electronics, electronic assemblies, and power rectification applications.
The ES1G-13-F is a silicon junction switching diode.
The country of origin for this diode is India.
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