onsemi Isolated PowerTrench 2 Type P-Channel MOSFET, 3.7 A, 20 V Enhancement, Surface Mount, 6-Pin MLP FDMA1023PZ

onsemi FDMA1023PZ Isolated PowerTrench 2 Type P-Channel MOSFET is a high-performance discrete semiconductor device designed for efficient power switching in electronic circuits. Rated for a maximum continuous drain current of 3.7 A and a maximum drain-source voltage of 20 V, it features an enhancement-mode isolated transistor configuration to ensure optimal performance and reliability in demanding industrial and commercial environments.

The device is housed in a compact 6-pin MLP surface mount package measuring 2 mm in length and width, with a height of 0.75 mm. This small form factor supports high-density circuit board layouts used in power management modules and synchronous rectifiers.

Its maximum drain-source resistance (Rds) is a low 195 milliohms, enabling efficient conduction with minimal power loss. Typical gate charge of 8.6 nC at the gate-source voltage facilitates fast switching speeds, contributing to overall system efficiency. The maximum power dissipation of 1.5 W allows the MOSFET to handle significant load without overheating.

The soft reverse recovery body diode minimizes switching losses and reduces the need for additional snubber circuitry, enhancing performance in AC/DC power supplies and power conversion systems. The device operates reliably over a wide temperature range from -55°C up to 150°C, making it suitable for harsh industrial and automotive applications (though it does not meet automotive standard certification).

Applications include power supply design, synchronous rectification, and power management in industrial, manufacturing, and commercial electronics. Its robust design and advanced PowerTrench technology ensure increased system efficiency and power density.

This MOSFET features a low maximum drain-source resistance of 195 mΩ for efficient switching. It utilizes an enhancement-mode, isolated configuration ideal for power switching. The device has a compact 6-pin MLP package with dimensions 2 mm length, 2 mm width, and 0.75 mm height.

Maximum power dissipation is rated at 1.5 W with operating temperatures from -55°C to 150°C. Designed with soft reverse recovery body diode to optimize synchronous rectification performance. Typical gate charge is 8.6 nC at Vgs, allowing fast switching speeds.

The transistor supports a maximum gate-source voltage of ±8 V and forward voltage of -0.8 V. Ideal for power efficient applications requiring high density and reliable p-channel MOSFET switching. Explore the onsemi MOSFET range on EnvMart for advanced electronic components, power management, and semiconductor solutions tailored to modern industrial and electronic designs.