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Vishay 1200 V 8 A Ultrafast Soft Recovery Diode Recovery 2-Pin TO-247AC VS-HFA08PB120-N3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 20.7mm |
| Length | 15.9mm |
| Model | VS-HFA08PB120-N3 |
| Width | 5.3mm |
| Mount Type | Through Hole |
| Series | HEXFRED |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247AC |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pay online using | Or choose to pay later via bank transfer |
| RS Stock No. | 708-4670Brand: VishayManufacturers Part No.: VS-HFA08PB120-N3 |
| Pin Count | 2 |
| Maximum Continuous Forward Current If | 8A |
| Peak Reverse Repetitive Voltage Vrrm | 1200V |
| Diode Configuration | Single |
| Rectifier Type | Recovery |
| Peak Reverse Current Ir | 10A |
| Peak Non-Repetitive Forward Surge Current Ifsm | 130A |
| Maximum Forward Voltage Vf | 4.3V |
| Peak Reverse Recovery Time trr | 160ns |
Key Features
- Features ultrafast and ultrasoft recovery characteristics for optimal switching performance.
- Constructed as a single diode in a 2-pin TO-247AC through-hole package.
- Capable of peak reverse repetitive voltage of 1200 V and peak forward surge current of 130 A.
- Designed for a maximum operating temperature of 150°C and minimum operating temperature of -55°C.
- Incorporates HEXFRED planar technology with a Schottky barrier-based structure to reduce power loss and electromagnetic interference.
- Offers a peak reverse recovery time of 160 ns ensuring rapid switching with minimal losses.
- Complies with RoHS standards and is manufactured in China.
Product Description
Vishay VS-HFA08PB120-N3 ultrafast soft recovery diode is a high-performance rectifier designed for demanding industrial and electronic applications requiring efficient and reliable power switching. With a voltage rating of 1200 V and a continuous forward current rating of 8 A, this diode operates effectively in power semiconductor circuits.
The diode features a 2-pin TO-247AC through-hole mounting, making it suitable for integration into various electronic systems. Its ultrafast switching capability results from the HEXFRED planar technology that utilizes a Schottky barrier inner structure to provide soft and fast recovery characteristics, reducing switching losses.
The diode's peak reverse repetitive voltage is rated at 1200 V, while the peak forward surge current capacity reaches 130 A, allowing it to withstand temporary high current spikes safely. It can operate across a broad temperature range from -55°C to 150°C, enabling use in rugged and demanding environments.
Physical dimensions (Height: 20.7 mm, Length: 15.9 mm, Width: 5.3 mm) offer a compact footprint in PCB designs. The device complies with RoHS environmental standards and is manufactured in China, ensuring quality and regulatory compliance.
Ultrafast recovery time with ultrasoft recovery reduces switching losses and electromagnetic interference. Low peak reverse recovery current and reverse recovery charge for minimal power dissipation. HEXFRRED technology enhances performance as companion diodes for IGBTs and MOSFETs in industrial, laboratory, and commercial applications.
Robust design suited for power management, motor drives, power supplies, and inverter circuits. Manufactured to IEC standards with consistent, reliable performance. Compact TO-247AC package ensures ease of handling and installation.
RoHS compliant and environmentally friendly.
This Vishay ultrafast soft recovery diode model VS-HFA08PB120-N3 is an excellent choice for engineers and designers seeking an efficient, reliable diode optimized for high-frequency switching and power conversion applications. Browse the Discrete Semiconductors category at EnvMart for more advanced semiconductor components.
Explore more products in our Schottky Diodes & Rectifiers category.
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Frequently Asked Questions
The maximum reverse repetitive voltage of the Vishay VS-HFA08PB120-N3 diode is 1200 V.
This diode has a continuous forward current rating of 8 A.
It is constructed in a 2-pin TO-247AC through-hole package.
The peak forward surge current capacity of this diode is 130 A.
The diode can operate within a temperature range of -55°C to 150°C.
The peak reverse recovery time is rated at 160 ns, ensuring rapid switching.
It incorporates HEXFRED planar technology, which utilizes a Schottky barrier structure to enhance performance.
Yes, it complies with RoHS standards, ensuring it meets environmental regulations.
The dimensions are as follows: Height 20.7 mm, Length 15.9 mm, Width 5.3 mm.
This diode is classified as a recovery rectifier.
The maximum forward voltage drop is 4.3 V.
It is suitable for power management, motor drives, power supplies, and inverter circuits.
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