Nexperia N-Channel MOSFET, 360 mA, 60 V Enhancement Mode, 3-Pin SOT-23 Package BSS138BK,215

Nexperia BSS138BK,215 is an N-Channel Enhancement Mode MOSFET designed for switching and amplification in electronic circuits. It features a compact 3-pin SOT-23 surface mount package ensuring easy integration on printed circuit boards.

This MOSFET supports a maximum continuous drain current of 360 mA and withstands drain-source voltages up to 60 V. Its low maximum drain-source resistance of 1.6 ohms ensures efficient current conduction with minimal losses.

The device operates reliably within a wide temperature range from -55°C to 150°C making it suitable for industrial, commercial, and consumer electronic applications. The maximum gate-source voltage rating of -20 to +20 volts provides ruggedness against voltage spikes.

With a typical gate charge of 0.6 nC and a forward voltage of 1.1 V, this MOSFET enables fast switching speeds and low conduction losses, essential for power management and signal processing circuits.

This MOSFET operates in enhancement mode ensuring efficient switching performance. It supports a maximum power dissipation of 420 mW enabling reliable thermal handling. The device exhibits a low maximum drain-source resistance of 1.6 ohms for improved conductivity.

The package dimensions are compact, measuring 3 mm length, 1.4 mm width, and 1 mm height. Operable over a wide temperature range from -55°C to 150°C, suitable for various environments. Maximum gate-source voltage rating ranges from -20 V to +20 V allowing robust gate drive tolerance.

Typical gate charge is low at 0.6 nC ensuring fast switching speeds and low gate losses. The forward voltage drop is 1.1 V, contributing to efficient power management. Surface mount type enables easy PCB integration and automated assembly.

Manufactured in China and designed by Nexperia for discrete semiconductor applications.

This component is widely used in electronic circuit design, industrial automation, power management systems, and embedded electronics requiring compact, reliable MOSFET transistors. It is ideal for engineers and manufacturers focusing on efficient and durable semiconductor switches.

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