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Nexperia N-Channel MOSFET, 310 mA, 60 V Enhancement, 3-Pin SC-70 2N7002BKW,115

Category MOSFET Brand Nexperia Condition New

Specifications

Country of Origin Malaysia
Brand Nexperia
Height 1mm
Length 2.2mm
Model 2N7002BKW,115
Width 1.35mm
Mount Type Surface
Series 2N7002BKW
Maximum Operating Temperature 150°C
Package Type SC-70
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 310mA
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 2Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 330mW
Typical Gate Charge Qg @ Vgs 0.5nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.2V

Key Features

  • Supports a maximum continuous drain current of 310 mA.
  • Maximum drain-source voltage of 60 V ensures safe operation.
  • Low drain-source resistance of 2 ohms reduces power losses.
  • Surface mount package type SC-70 with 3 pins for compact applications.
  • Enhancement mode channel with typical gate charge of 0.5 nC enhances switching efficiency.
  • Forward voltage of 1.2 V suitable for low voltage applications.
  • Maximum power dissipation rating of 330 mW ensures reliable thermal performance.
  • Wide operating temperature range from -55°C to 150°C for diverse environments.

Product Description

Nexperia 2N7002BKW,115 is a high-quality N-Channel Enhancement Mode MOSFET designed for low power switching and amplification in electronic circuits. It features a maximum continuous drain current of 310 mA and a maximum drain-source voltage rating of 60 V, making it suitable for various low-power electronic applications including automotive and industrial control systems.

The device comes in a compact 3-pin SC-70 surface mount package, facilitating easy integration into high-density PCB designs. It offers low drain-source resistance of 2 Ω, which helps minimize conduction losses and improve overall circuit efficiency.

This MOSFET operates over a wide temperature range from -55°C to 150°C and complies with automotive standard AEC-Q101, ensuring robust performance in automotive and harsh environment applications. The typical gate charge of 0.5 nC and forward voltage of 1.2 V enable fast switching and stable operation.

Its compact physical dimensions (2.2 mm length, 1.35 mm width, and 1 mm height) make it ideal for space-constrained electronic designs. The component's maximum power dissipation is 330 mW, requiring appropriate thermal management in high-load conditions.

Common industrial and commercial use cases include powering switching circuits, load switching, and signal amplification in instruments, automotive electronics, and consumer gadgets.

Supports a maximum continuous drain current of 310 mA. Maximum drain-source voltage of 60 V ensures safe operation. Low drain-source resistance of 2 ohms reduces power losses. Surface mount package type SC-70 with 3 pins for compact applications.

Enhancement mode channel with typical gate charge of 0.5 nC enhances switching efficiency. Forward voltage of 1.2 V suitable for low voltage applications. Maximum power dissipation rating of 330 mW ensures reliable thermal performance.

Wide operating temperature range from -55°C to 150°C for diverse environments. Meets automotive standard AEC-Q101 for high reliability in automotive uses. Compact dimensions: length 2.2 mm, width 1.35 mm, height 1 mm.

Explore more components like the Nexperia 2N7002BKW,115 N-Channel MOSFET and other semiconductor devices on EnvMart for your industrial, automotive, and electronic development needs.

Nexperia N-Channel MOSFET, 310 mA, 60 V Enhancement, 3-Pin SC-70 2N7002BKW,115
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Frequently Asked Questions

The maximum continuous drain current for this model is 310 mA.

This MOSFET has a maximum drain-source voltage rating of 60 V.

It features a low drain-source resistance of 2 ohms, which helps reduce power losses.

The physical dimensions of this model are 2.2 mm in length, 1.35 mm in width, and 1 mm in height.

The typical gate charge for the Nexperia 2N7002BKW,115 is 0.5 nC.

It operates over a wide temperature range from -55°C to 150°C.

This model comes in a compact 3-pin SC-70 surface mount package.

The maximum power dissipation rating for this MOSFET is 330 mW.

It complies with the automotive standard AEC-Q101, ensuring reliable performance in automotive applications.

The forward voltage of this model is 1.2 V, making it suitable for low voltage applications.

This MOSFET features an N-channel enhancement mode, suitable for low power switching and amplification.

It is suitable for various low-power electronic applications including automotive and industrial control systems.

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