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| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 1.12mm |
| Length | 3.04mm |
| Model | ZXMN2B14FHTA |
| Width | 1.4mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pay online using | Or choose to pay later via bank transfer |
| RS Stock No. | 708-2636Brand: DiodesZetexManufacturers Part No.: ZXMN2B14FHTA |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 4.3A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 100mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.5W |
| Typical Gate Charge Qg @ Vgs | 11nC |
| Maximum Gate Source Voltage Vgs | -8, +8V |
| Forward Voltage Vf | 690mV |
DiodesZetex ZXMN2B14FHTA is a high-performance N-Channel MOSFET designed for various electronic switching and amplification applications. It features a continuous drain current capacity of 4.3 A and a drain-source voltage rating of 20 V, making it suitable for circuits requiring moderate power handling.
This device is housed in a compact 3-pin SOT-23 surface mount package, optimizing board space and allowing for easy assembly in automated production lines. The enhancement mode N-channel architecture enables efficient switching with low on-resistance of 100 milliohms, reducing conduction losses and improving overall circuit efficiency.
The MOSFET supports a maximum power dissipation of 1.5 watts and can sustain operating temperatures from -55°C up to 150°C, suitable for industrial and commercial environments. Its minimal gate charge of 11 nanocoulombs ensures rapid switching performance, important for high-frequency applications.
Typical dimensions measure 3.04 mm in length, 1.4 mm in width, and 1.12 mm in height, fitting comfortably in compact circuit designs. The device regulates a maximum gate-source voltage range between -8 V and +8 V, safeguarding the transistor from over-voltage conditions.
Maximum continuous drain current of 4.3 A enables robust current handling. Drain-source voltage of 20 V suits low-voltage power applications. SOT-23 package offers space-saving surface mount capability. Enhancement mode N-channel design ensures effective switching performance.
Low on-resistance of 100 milliohms reduces power dissipation. Maximum power dissipation of 1.5 W supports reliable operation under load. Wide operating temperature range from -55°C to 150°C for diverse environments. Typical gate charge of 11 nC allows fast switching speeds.
Compact physical size supports high-density PCB layouts. Forward voltage of 690 mV aids in low power loss conduction.
This MOSFET is ideal for use in consumer electronics, power management circuits, automotive electronics, industrial controls, and other applications requiring reliable and efficient semiconductor switching components. Its compact size and surface mount package ensure easy integration into modern electronic assemblies.
Explore more components within the Discrete Semiconductors category on EnvMart for complementary products and advanced electronic solutions.
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