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DiodesZetex N-Channel MOSFET, 4.3 A Continuous Drain Current, 20 V Drain Source Voltage, Surface Mount SOT-23 ZXMN2B14FHTA

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1.12mm
Length 3.04mm
Model ZXMN2B14FHTA
Width 1.4mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
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RS Stock No. 708-2636Brand: DiodesZetexManufacturers Part No.: ZXMN2B14FHTA
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 4.3A
Maximum Drain Source Voltage Vds 20V
Maximum Drain Source Resistance Rds 100mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 1.5W
Typical Gate Charge Qg @ Vgs 11nC
Maximum Gate Source Voltage Vgs -8, +8V
Forward Voltage Vf 690mV

Key Features

  • Provides a maximum continuous drain current of 4.3 amperes.
  • Operates with a maximum drain-source voltage of 20 volts.
  • Packaged in a SOT-23 3-pin surface mount configuration.
  • Features an enhancement mode N-channel design for efficient switching.
  • Maximum drain-source resistance is 100 milliohms, ensuring low power loss.
  • Typical gate charge at gate-source voltage is 11 nanocoulombs for fast switching.
  • Can operate in temperatures ranging from -55°C to 150°C.
  • Maximum power dissipation is 1.5 watts, suitable for low power applications.

Product Description

DiodesZetex ZXMN2B14FHTA is a high-performance N-Channel MOSFET designed for various electronic switching and amplification applications. It features a continuous drain current capacity of 4.3 A and a drain-source voltage rating of 20 V, making it suitable for circuits requiring moderate power handling.

This device is housed in a compact 3-pin SOT-23 surface mount package, optimizing board space and allowing for easy assembly in automated production lines. The enhancement mode N-channel architecture enables efficient switching with low on-resistance of 100 milliohms, reducing conduction losses and improving overall circuit efficiency.

The MOSFET supports a maximum power dissipation of 1.5 watts and can sustain operating temperatures from -55°C up to 150°C, suitable for industrial and commercial environments. Its minimal gate charge of 11 nanocoulombs ensures rapid switching performance, important for high-frequency applications.

Typical dimensions measure 3.04 mm in length, 1.4 mm in width, and 1.12 mm in height, fitting comfortably in compact circuit designs. The device regulates a maximum gate-source voltage range between -8 V and +8 V, safeguarding the transistor from over-voltage conditions.

Maximum continuous drain current of 4.3 A enables robust current handling. Drain-source voltage of 20 V suits low-voltage power applications. SOT-23 package offers space-saving surface mount capability. Enhancement mode N-channel design ensures effective switching performance.

Low on-resistance of 100 milliohms reduces power dissipation. Maximum power dissipation of 1.5 W supports reliable operation under load. Wide operating temperature range from -55°C to 150°C for diverse environments. Typical gate charge of 11 nC allows fast switching speeds.

Compact physical size supports high-density PCB layouts. Forward voltage of 690 mV aids in low power loss conduction.

This MOSFET is ideal for use in consumer electronics, power management circuits, automotive electronics, industrial controls, and other applications requiring reliable and efficient semiconductor switching components. Its compact size and surface mount package ensure easy integration into modern electronic assemblies.

Explore more components within the Discrete Semiconductors category on EnvMart for complementary products and advanced electronic solutions.

DiodesZetex N-Channel MOSFET, 4.3 A Continuous Drain Current, 20 V Drain Source Voltage, Surface Mount SOT-23 ZXMN2B14FHTA
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Frequently Asked Questions

The maximum continuous drain current for this model is 4.3 A.

It can handle a maximum drain-source voltage of 20 V.

This MOSFET is packaged in a SOT-23 surface mount configuration.

The maximum power dissipation is 1.5 W.

The typical gate charge is 11 nanocoulombs.

It operates within a temperature range of -55°C to 150°C.

The dimensions are 3.04 mm in length, 1.4 mm in width, and 1.12 mm in height.

The maximum gate-source voltage is between -8 V and +8 V.

The maximum drain-source resistance is 100 milliohms.

It features an enhancement mode N-channel design.

This MOSFET is suitable for consumer electronics, power management circuits, automotive electronics, and industrial controls.

The forward voltage is 690 mV.

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