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DiodesZetex N-Channel MOSFET 30 V 4.6 A 3-Pin SOT-23 Surface Mount Enhancement Mode ZXMN3F30FHTA

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1.12mm
Length 3.04mm
Model ZXMN3F30FHTA
Width 1.4mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
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RS Stock No. 708-2539Brand: DiodesZetexManufacturers Part No.: ZXMN3F30FHTA
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 4.6A
Maximum Drain Source Voltage Vds 30V
Maximum Drain Source Resistance Rds 65mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 1.4W
Typical Gate Charge Qg @ Vgs 7.7nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.2V

Key Features

  • Maximum continuous drain current of 4.6 A ensures efficient power handling.
  • Supports a maximum drain-source voltage of 30 V, suitable for low voltage applications.
  • Compact SOT-23 3-pin package enables surface mounting on PCBs.
  • Enhancement channel mode design for reliable switching performance.
  • Low typical gate charge of 7.7 nC minimizes switching losses.
  • Maximum drain-source resistance of 65 milliohms provides low conduction losses.
  • Operating temperature range from -55°C to 150°C supports harsh environments.
  • Maximum power dissipation of 1.4 W allows moderate power operation.

Product Description

DiodesZetex ZXMN3F30FHTA is a high-quality N-Channel MOSFET designed for electronic applications requiring efficient switching and power management. Rated for a maximum continuous drain current of 4.6 amperes and a drain-source voltage of 30 volts, this device is well suited for low voltage power switching in industrial and commercial electronics.

The transistor is housed in a compact 3-pin SOT-23 surface mount package, making it ideal for space-constrained circuit board designs. Its enhancement mode channel supports reliable and efficient operation with low gate charge (7.7 nC) and a low on-resistance of 65 milliohms, minimizing conduction and switching losses. This MOSFET can dissipate up to 1.4 watts of power, ensuring it can handle moderate thermal loads.

This device operates safely across a wide temperature range from -55°C to 150°C, making it suitable for demanding environments including industrial control systems, consumer electronics, and automotive electronics where reliable power switching is critical. The maximum gate-source voltage rating of -20 to +20 volts offers robust performance margins under varying gate drive conditions.

Typical forward voltage is 1.2 V, allowing transparent conduction in switching applications. The small size of the SOT-23 package contributes to efficient PCB layout and thermal management. This MOSFET is compliant with industry standards but does not carry automotive-specific approvals.

Maximum continuous drain current of 4.6 A for efficient power switching. Maximum drain-source voltage of 30 V suitable for low voltage systems. SOT-23 3-pin surface mount package enables compact PCBs. Enhancement mode channel ensures stable switching behavior.

Low typical gate charge reduces switching losses. Maximum drain-source resistance of 65 mΩ minimizes conduction losses. Wide operating temperature range (-55°C to 150°C) for industrial use. Maximum power dissipation of 1.4 W supports thermal reliability.

This DiodesZetex MOSFET model ZXMN3F30FHTA is ideal for usage in power management circuits, switching regulators, motor controllers, and other applications requiring effective low-voltage power transistor solutions.

Explore more MOSFETs and high-performance semiconductor devices in the Electronics & Electricals category at EnvMart for your industrial and commercial requirements.

DiodesZetex N-Channel MOSFET 30 V 4.6 A 3-Pin SOT-23 Surface Mount Enhancement Mode ZXMN3F30FHTA
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Frequently Asked Questions

The maximum continuous drain current for this model is 4.6 A, ensuring efficient power handling in various applications.

This MOSFET supports a maximum drain-source voltage of 30 V, making it suitable for low voltage applications.

It is housed in a compact SOT-23 3-pin surface mount package, ideal for space-constrained circuit board designs.

The typical gate charge is 7.7 nC, which helps minimize switching losses during operation.

The maximum power dissipation for this MOSFET is 1.4 W, allowing it to handle moderate thermal loads effectively.

This model operates safely across a wide temperature range from -55°C to 150°C, suitable for harsh environments.

The maximum drain-source resistance is 65 milliohms, which minimizes conduction losses during operation.

The typical forward voltage is 1.2 V, allowing for efficient conduction in switching applications.

It features an enhancement mode channel design that supports reliable and efficient switching performance.

The maximum gate-source voltage rating is -20 to +20 volts, providing robust performance margins under varying conditions.

The dimensions of this MOSFET are 3.04 mm in length, 1.4 mm in width, and 1.12 mm in height.

This MOSFET is suitable for power management circuits, switching regulators, and motor controllers in low-voltage applications.

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