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DiodesZetex N-Channel MOSFET 300 mA 50 V Enhancement 3-Pin SOT-23 DMN5L06K-7

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1.1mm
Length 3mm
Model DMN5L06K-7
Width 1.4mm
Mount Type Surface
Series DMN5L06K
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -65°C
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RS Stock No. 708-2428Brand: DiodesZetexManufacturers Part No.: DMN5L06K-7
Pin Count 3
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 300mA
Maximum Drain Source Voltage Vds 50V
Maximum Drain Source Resistance Rds 3Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 350mW
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.4V

Key Features

  • Designed for enhancement mode operation with N-channel channel type.
  • Maximum power dissipation of 350 mW ensures efficient thermal management.
  • Small physical dimensions with 3 mm length, 1.4 mm width, and 1.1 mm height.
  • Operating temperature range from -65°C to 150°C for robust performance in varied environments.
  • Compliant with automotive standard AEC-Q101 for reliability in automotive applications.
  • Low maximum drain-source resistance of 3 Ω to optimize power efficiency.
  • Maximum gate-source voltage rating of -20 V to +20 V for safe operation.
  • Forward voltage of 1.4 V supports effective switching.

Product Description

DiodesZetex DMN5L06K-7 is a high-quality N-Channel Enhancement Mode MOSFET designed to handle up to 300 mA continuous drain current and withstand drain-source voltages up to 50 V. Packaged in a compact 3-pin SOT-23 surface mount case, this MOSFET is suitable for a variety of industrial, automotive, and electronics manufacturing applications where space and efficiency are critical.

The device features a low maximum drain-source resistance of 3 Ω, enabling efficient power switching and reduced heat generation during use. It operates reliably within a wide temperature range from -65°C to 150°C, making it suitable for harsh environments including industrial controls and automotive subsystems. Compliance with the automotive AEC-Q101 standard underscores its reliability and quality for demanding applications.

Its small form factor with dimensions of 3 mm length, 1.4 mm width, and 1.1 mm height facilitates high-density PCB design while maintaining excellent electrical performance. The device supports a maximum gate-source voltage of -20 V to +20 V providing design flexibility in gate drive voltages.

Typical uses include switching and amplification in power management, signal processing, and embedded systems. The moderate maximum power dissipation of 350 mW ensures it can operate effectively under typical load conditions without excessive heat build-up.

Designed for enhancement mode operation with N-channel channel type. Maximum power dissipation of 350 mW for efficient thermal management. Compact 3-pin SOT-23 surface mount package for space saving PCB layouts. Operating temperature range from -65°C to 150°C ensures robust performance.

Compliant with automotive standard AEC-Q101 for automotive use. Low maximum drain-source resistance of 3 Ω for effective power switching. Maximum gate-source voltage rating of -20 V to +20 V for reliable control. Forward voltage of 1.4 V suitable for switching applications.

Small dimensions support compact industrial and consumer electronics designs.

This component is essential for engineers and designers requiring a reliable and efficient N-channel MOSFET for industrial electronics, automotive systems, power management circuits, and consumer device manufacturing. Browse further in our MOSFET and discrete semiconductor catalog for complementary components and advanced solutions.

DiodesZetex N-Channel MOSFET 300 mA 50 V Enhancement 3-Pin SOT-23 DMN5L06K-7
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Frequently Asked Questions

The maximum continuous drain current for the DMN5L06K-7 is 300 mA.

This model can withstand a maximum drain-source voltage of 50 V.

The dimensions of the SOT-23 package are 3 mm in length, 1.4 mm in width, and 1.1 mm in height.

The operating temperature range is from -65°C to 150°C.

The maximum power dissipation is 350 mW.

The maximum gate-source voltage rating is -20 V to +20 V.

The maximum drain-source resistance is 3 Ω.

Yes, it is compliant with the automotive standard AEC-Q101.

This model uses an N-channel type.

The forward voltage is 1.4 V.

It is designed for surface mounting.

This MOSFET is suitable for switching and amplification in power management, signal processing, and embedded systems.

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