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Infineon HEXFET N-Channel MOSFET 55 V 51 A TO-220 Package IRFZ44ZPBF

Category Power MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 8.77mm
Length 10mm
Model IRFZ44ZPBF
Width 4.4mm
Mount Type Through Hole
Series HEXFET
Maximum Operating Temperature 175°C
Package Type TO-220
Minimum Operating Temperature -55°C
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RS Stock No. 688-7165Brand: InfineonManufacturers Part No.: IRFZ44ZPBFDistrelec Article No.: 304-43-456
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 51A
Maximum Drain Source Voltage Vds 55V
Maximum Drain Source Resistance Rds 14mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 80W
Typical Gate Charge Qg @ Vgs 29nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.2V

Key Features

  • High efficiency HEXFET design suitable for power management.
  • Maximum continuous drain current of 51 A for heavy load applications.
  • Low drain-source resistance of 14 milliohms minimizes conduction losses.
  • Operating temperature range from -55°C up to 175°C for rugged environments.
  • Maximum power dissipation rating of 80 W ensures reliable performance.
  • Enhancement mode channel operation offers easy drive characteristics.
  • Through-hole mount type compatible with standard PCB designs.
  • Forward voltage of 1.2 V improves switching efficiency.

Product Description

Infineon IRFZ44ZPBF is a HEXFET N-Channel MOSFET designed for power electronics applications requiring efficient switching and high load capability. Rated at maximum 55 V drain-source voltage and continuous drain current of 51 A, it supports demanding industrial and electronic designs.

This device uses enhancement mode operation and features a low on-resistance of 14 milliohms, allowing for minimal conduction losses and improved energy efficiency in power supplies, motor drives, and other control circuits. The 3-pin TO-220 package facilitates through-hole mounting and aids in effective thermal management with up to 80 W maximum power dissipation.

Its operating temperature range from -55°C to 175°C suits demanding environments including industrial automation, HVAC systems, and manufacturing equipment. The typical forward voltage is 1.2 V with a gate charge of 29 nC enabling fast switching performance, essential for modern power electronics.

The maximum gate-source voltage rating of ±20 V ensures robust tolerance for gate drive signals. This MOSFET is ideal for applications where both high efficiency and thermal stability are critical.

Infineon's HEXFET technology provides industry-leading performance benchmarks, delivering enhanced power density and system reliability. It is an excellent choice for engineers designing power switching solutions, battery management systems, and renewable energy converters.

High efficiency HEXFET design suitable for power management. Maximum continuous drain current of 51 A for heavy load applications. Low drain-source resistance minimizes conduction losses. Wide operating temperature range from -55°C to 175°C.

Robust maximum power dissipation of 80 W for reliable operation. Through-hole TO-220 package for ease of installation and cooling. Enhancement mode operation for easy gate control. Fast switching with 29 nC gate charge. Maximum gate-source voltage of ±20 V for flexible drive.

Forward voltage of 1.2 V improves efficiency.

This IRFZ44ZPBF MOSFET from Infineon supports various industrial, laboratory, and manufacturing applications including power management and energy systems, reflecting modern semiconductor quality and design.

Explore and compare this product and similar Power MOSFETs at EnvMart for your industrial electronic component requirements.

Infineon HEXFET N-Channel MOSFET 55 V 51 A TO-220 Package IRFZ44ZPBF
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Frequently Asked Questions

The maximum continuous drain current for the IRFZ44ZPBF is 51 A, making it suitable for heavy load applications.

This MOSFET operates within a temperature range of -55°C to 175°C, which is suitable for rugged environments.

The IRFZ44ZPBF is packaged in a TO-220 format, which allows for through-hole mounting.

The maximum drain-source voltage for this model is 55 V, suitable for various power management applications.

This MOSFET features a low drain-source resistance of 14 milliohms, which helps minimize conduction losses.

The maximum power dissipation rating for this model is 80 W, ensuring reliable performance in applications.

The typical gate charge for the IRFZ44ZPBF is 29 nC, enabling fast switching performance.

The forward voltage of the IRFZ44ZPBF is 1.2 V, which improves switching efficiency.

This model uses an enhancement mode channel, which provides easy drive characteristics.

The dimensions of this MOSFET are 10 mm in length, 4.4 mm in width, and 8.77 mm in height.

The maximum gate-source voltage rating for this model is ±20 V, allowing for robust tolerance of gate drive signals.

This MOSFET is suitable for power management, motor drives, and control circuits in industrial and electronic designs.

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