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STMicroelectronics SuperMESH N-Channel Power MOSFET 10 A 500 V Enhancement 3-Pin TO-220 STP11NK50Z

Category Power MOSFET Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 9.15mm
Length 10.4mm
Model STP11NK50Z
Width 4.6mm
Mount Type Through Hole
Series SuperMESH
Maximum Operating Temperature 150°C
Package Type TO-220
Minimum Operating Temperature -55°C
Standards/Approvals ECOPACK, JEDEC JESD97
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 10A
Maximum Drain Source Voltage Vds 500V
Maximum Drain Source Resistance Rds 0.52Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 125W
Typical Gate Charge Qg @ Vgs 49nC
Maximum Gate Source Voltage Vgs -30, +30V
Forward Voltage Vf 1.6V

Key Features

  • This MOSFET features a maximum power dissipation of 125 W for high-power applications.
  • The device operates with an enhancement channel mode and a maximum gate-source voltage of ±30 V.
  • Maximum drain-source resistance (Rds) is 0.52 ohms, ensuring efficient conduction.
  • It provides a typical gate charge of 49 nC at the gate-source voltage, which aids switching performance.
  • The transistor supports operating temperatures from -55°C to 150°C.
  • Package dimensions measure 10.4 mm in length, 4.6 mm in width, and 9.15 mm in height.
  • Designed for through-hole mounting with a sturdy TO-220 package.
  • Conforms to ECOPACK and JEDEC JESD97 standards for reliability and environmental compliance.

Product Description

STMicroelectronics STP11NK50Z is a SuperMESH series N-Channel Power MOSFET designed for power electronics and semiconductor applications requiring efficient switching and high current capabilities. Rated for 10 amperes continuous drain current and 500 volts maximum drain-source voltage, it operates in enhancement mode and is housed in a through-hole TO-220 package featuring 3 pins.

This MOSFET features a maximum power dissipation of 125 watts, allowing it to handle significant power loads effectively. The maximum gate-source voltage tolerance is ±30 volts, protecting the device under high gate drive voltages. Its low drain-source resistance of 0.52 ohms ensures minimal conduction losses, improving energy efficiency.

The typical gate charge of 49 nanocoulombs at Vgs supports rapid switching, suitable for industrial motor drives, power supplies, and high-frequency switching circuits. The device can reliably operate within a temperature range from -55°C to 150°C, making it suitable for demanding environmental conditions.

Physical dimensions of the package are compact with a length of 10.4 mm, width of 4.6 mm, and height of 9.15 mm, optimized for through-hole mounting, facilitating robust mechanical and thermal connections. It complies with ECOPACK and JEDEC JESD97 standards, ensuring environmental safety and quality reliability.

This transistor is ideal for industrial automation, power management systems, construction and manufacturing electronics, and other demanding electronic applications requiring robust power semiconductor devices.

This MOSFET features a maximum power dissipation of 125 W for high-power applications. The device operates with an enhancement channel mode and a maximum gate-source voltage of ±30 V. Maximum drain-source resistance (Rds) is 0.52 ohms, ensuring efficient conduction.

It provides a typical gate charge of 49 nC at the gate-source voltage, which aids switching performance. The transistor supports operating temperatures from -55°C to 150°C. Package dimensions measure 10.4 mm in length, 4.6 mm in width, and 9.15 mm in height.

Designed for through-hole mounting with a sturdy TO-220 package. Conforms to ECOPACK and JEDEC JESD97 standards for reliability and environmental compliance. Explore more power semiconductor options from STMicroelectronics in the Power MOSFET category at EnvMart to find the ideal components for your industrial and electronic projects.

STMicroelectronics SuperMESH N-Channel Power MOSFET 10 A 500 V Enhancement 3-Pin TO-220 STP11NK50Z
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Frequently Asked Questions

The maximum continuous drain current for this model is 10 A.

It has a maximum drain-source voltage rating of 500 V.

The maximum power dissipation for the STP11NK50Z is 125 W.

The typical gate charge at the gate-source voltage is 49 nC.

The package dimensions are 10.4 mm in length, 4.6 mm in width, and 9.15 mm in height.

The maximum gate-source voltage for the STP11NK50Z is ±30 V.

The maximum drain-source resistance (Rds) is 0.52 ohms.

It supports an operating temperature range from -55°C to 150°C.

This model is designed for through-hole mounting.

It conforms to ECOPACK and JEDEC JESD97 standards.

This MOSFET uses an N-channel type.

It is suitable for industrial automation, power management systems, and high-frequency switching circuits.

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