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onsemi QFET N-Channel MOSFET, 19 A, 200 V Enhancement Mode, 3-Pin TO-220 FQPF19N20C
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 9.19mm |
| Length | 10.16mm |
| Model | FQPF19N20C |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Series | QFET |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 19A |
| Maximum Drain Source Voltage Vds | 200V |
| Maximum Drain Source Resistance Rds | 170mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 43W |
| Typical Gate Charge Qg @ Vgs | 40.5nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.5V |
Key Features
- Designed with proprietary QFET® technology for low on-resistance and reduced switching loss.
- Suitable for power supplies, PFC, DC-DC converters, and motion control applications.
- Maximum power dissipation of 43W ensures reliable high-load operation.
- Operates efficiently across a temperature range from -55°C to 150°C.
- Through-hole mount type with compact TO-220 package dimensions.
- Pin count of 3 supports straightforward circuit integration.
- Typical gate charge of 40.5nC for improved switching performance.
- Robust gate-source voltage tolerance of -30V to +30V enhances device reliability.
Product Description
onsemi FQPF19N20C is a QFET® planar N-Channel MOSFET engineered to deliver superior performance in power electronics. Rated for a continuous drain current of 19A and a maximum drain-source voltage of 200V, this device features enhancement mode operation, housed within a durable 3-pin TO-220 through-hole package.
Utilizing advanced QFET® technology, the MOSFET offers reduced on-state resistance (RDS(on)) and minimal switching losses due to lowered gate charge and output capacitance, ideal for energy efficient designs. It is built to withstand a wide operating temperature spectrum from -55°C ambient to a maximum of 150°C junction temperature, supporting demanding industrial environments.
The device excels in applications such as power supplies, power factor correction circuits, DC-DC converters, plasma display panels, lighting ballasts, and motion control systems, making it versatile for industrial, commercial, and automotive electronics.
Its compact form factor with a height of 9.19mm, length of 10.16mm, and width of 4.7mm, combined with a standard TO-220 package enhances thermal handling and mechanical mounting flexibility.
Key electrical characteristics include a maximum power dissipation of 43W, a typical gate charge of 40.5nC at Vgs, and forward voltage of 1.5V, contributing to efficient switching and conduction properties. The gate-source voltage tolerance range of -30V to +30V ensures robustness against voltage fluctuations, extending device longevity.
Designed with proprietary QFET® technology for low on-resistance and reduced switching loss. Suitable for power supplies, PFC, DC-DC converters, and motion control. Operates reliably between -55°C and 150°C. Compact TO-220 package supports through-hole mounting.
Enhanced durability with 3-pin configuration. High maximum power dissipation of 43W. Typical gate charge of 40.5nC for efficient switching. Wide gate-source voltage range for reliability. Ideal for industrial, commercial, and automotive electronics.
Optimized physical dimensions for thermal efficiency. This product is part of the onsemi QFET series, offering advanced semiconductor solutions for modern electronic designs. Explore more semiconductor components and MOSFETs in the Electronics & Electricals category at EnvMart for reliable industrial-grade products.
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Frequently Asked Questions
The maximum continuous drain current of this model is 19A.
This MOSFET can handle a maximum drain-source voltage of 200V.
It is housed in a TO-220 package, which supports through-hole mounting.
It operates efficiently across a temperature range from -55°C to 150°C.
The typical gate charge for this MOSFET is 40.5nC at Vgs.
The maximum power dissipation for this unit is 43W.
The dimensions are 9.19mm in height, 10.16mm in length, and 4.7mm in width.
The forward voltage of this model is 1.5V.
It has a gate-source voltage tolerance range of -30V to +30V.
This model features an N-channel design and operates in enhancement mode.
It is suitable for power supplies, power factor correction circuits, DC-DC converters, and motion control applications.
The maximum drain-source resistance (RDS(on)) is 170mΩ.
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