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onsemi QFET N-Channel MOSFET 3 A 800 V Enhancement TO-220 3-Pin FQPF3N80C
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 9.19mm |
| Length | 10.16mm |
| Model | FQPF3N80C |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Series | QFET |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 3A |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 4.8Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 39W |
| Typical Gate Charge Qg @ Vgs | 13nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.4V |
Key Features
- Designed with QFET technology for low on-resistance and fast switching.
- Encapsulated in a TO-220 3-pin through hole package suitable for power management.
- Offers maximum power dissipation of 39 W for reliable performance.
- Operates effectively between -55°C to 150°C ambient temperatures.
- Maximum gate-source voltage ranges from -30 V to +30 V ensuring robust control.
- Typical gate charge of 13 nC reduces switching losses.
- Physical dimensions are 10.16 mm length, 9.19 mm height, and 4.7 mm width.
- Forward voltage drop is 1.4 V for efficient conduction.
Product Description
onsemi FQPF3N80C is a QFET N-Channel MOSFET designed for enhancement mode operation with a maximum continuous drain current of 3 A and maximum drain-source voltage of 800 V. It features a TO-220 3-pin through hole package that ensures durability and ease of mounting in various electronic assemblies.
This device utilizes advanced proprietary QFET technology providing excellent on-state loss reduction through lowered Rds(on) resistance and minimized switching losses by reducing gate charge and output capacitance. It ensures improved efficiency and thermal performance in power supplies, power factor correction circuits, DC-DC converters, lighting ballasts, plasma display panels, and motion control applications.
The MOSFET is rated for operation from -55°C to 150°C, making it suitable for a wide range of industrial environments. Its maximum power dissipation is 39 W which supports robust thermal management in demanding circuits. The gate-source voltage rating of -30 V to +30 V supports safe and reliable switching control.
Physical dimensions of 10.16 mm length, 9.19 mm height, and 4.7 mm width facilitate compatible integration with standard PCB layouts. The forward voltage of 1.4 V ensures efficient current conduction, optimizing power usage. This model does not comply with automotive standards and is recommended for general industrial and commercial electronics applications.
Employs QFET planar technology for high performance. Suitable for power supply and converter applications. Through-hole TO-220 package enables easy mounting. Wide temperature range for industrial use. Optimized gate charge reduces switching losses.
Choose onsemi FQPF3N80C for reliable, efficient, and durable power control in industrial electronics projects and applications. Explore more semiconductor devices to meet your specific design and manufacturing requirements at EnvMart.
Explore more products in our Discrete Semiconductor category.
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Frequently Asked Questions
The maximum continuous drain current for this model is 3 A.
The maximum drain-source voltage rating is 800 V.
The typical gate charge is 13 nC.
The physical dimensions are 10.16 mm in length, 9.19 mm in height, and 4.7 mm in width.
The maximum power dissipation is 39 W.
It operates effectively between -55°C to 150°C.
This model uses a TO-220 3-pin through hole package.
The maximum gate-source voltage ranges from -30 V to +30 V.
The forward voltage drop is 1.4 V.
It features an N-channel type.
This model is suitable for power supplies, power factor correction circuits, DC-DC converters, and motion control applications.
It utilizes QFET technology for low on-resistance and fast switching.
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