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onsemi QFET N-Channel MOSFET Enhancement Mode 9.5 A, 200 V, 3-Pin TO-220F Package FQPF10N20C
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 9.19mm |
| Length | 10.16mm |
| Model | FQPF10N20C |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Series | QFET |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220F |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 9.5A |
| Maximum Drain Source Voltage Vds | 200V |
| Maximum Drain Source Resistance Rds | 0.36Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 38W |
| Typical Gate Charge Qg @ Vgs | 20nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.5V |
Key Features
- Maximum continuous drain current of 9.5 A ensures high power handling capability.
- Supports a maximum drain-source voltage of 200 V for robust operation.
- Utilizes enhancement mode for reliable switching performance.
- Encapsulated in a durable TO-220F through-hole package with 3 pins.
- Low maximum drain-source resistance of 0.36 Ohms reduces conduction loss.
- Typical gate charge of 20 nC improves switching efficiency and speed.
- Capable of dissipating up to 38 W power under rated conditions.
- Operating temperature range from -55°C to 150°C offers versatility in harsh environments.
Product Description
onsemi FQPF10N20C is an N-Channel QFET MOSFET transistor designed for high performance in power management and switching applications. It features enhancement mode operation, a maximum continuous drain current of 9.5 A, and a maximum drain-source voltage rating of 200 V. The device is housed in a 3-pin TO-220F through-hole package that supports robust mounting and electrical connections.
This MOSFET offers low on-state resistance of 0.36 Ohms which minimizes power losses during conduction. It also benefits from a typical gate charge of 20 nC, enhancing switching speeds and reducing switching losses. The component can safely dissipate up to 38 W of power under normal operating conditions.
It performs reliably over a wide temperature range from -55°C to 150°C, making it suitable for industrial, commercial, and automotive electronic systems. The maximum gate-source voltage rating ensures operational safety across varied voltage levels. This device finds use in power supplies, power factor correction circuits, DC-DC converters, plasma display panels, lighting ballasts, and motion control circuits.
Dimensions of length 10.16 mm, width 4.7 mm, and height 9.19 mm support compact circuit board layouts. The device does not carry any automotive certifications but complies with general semiconductor standards suitable for discrete applications.
Maximum continuous drain current of 9.5 A ensures high power handling capability. Supports a maximum drain-source voltage of 200 V for robust operation. Utilizes enhancement mode for reliable switching performance. Encapsulated in a durable TO-220F through-hole package with 3 pins.
Low maximum drain-source resistance of 0.36 Ohms reduces conduction loss. Typical gate charge of 20 nC improves switching efficiency and speed. Capable of dissipating up to 38 W power under rated conditions. Operating temperature range from -55°C to 150°C offers versatility in harsh environments.
Gate-source voltage max ratings of -30 V to +30 V provide operational safety margins. Compact dimensions optimize PCB footprint.
Ideal for use in industrial electronics, power conversion, renewable energy systems, and automotive electronic controls. Browse our semiconductor MOSFET catalog for related onsemi components and fully compatible power management products.
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Frequently Asked Questions
The maximum continuous drain current for this model is 9.5 A, ensuring high power handling capability.
It supports a maximum drain-source voltage of 200 V, allowing for robust operation in various applications.
The typical gate charge is 20 nC, which enhances switching efficiency and speed.
The dimensions are 10.16 mm in length, 4.7 mm in width, and 9.19 mm in height, suitable for compact circuit board layouts.
This model can safely dissipate up to 38 W of power under rated conditions.
The operating temperature range is from -55°C to 150°C, making it versatile for harsh environments.
The maximum gate-source voltage rating is -30 V to +30 V, providing operational safety across varied voltage levels.
It is encapsulated in a TO-220F through-hole package with 3 pins, supporting robust mounting and electrical connections.
The maximum drain-source resistance is 0.36 Ohms, which helps reduce conduction loss during operation.
It is suitable for applications such as power supplies, power factor correction circuits, DC-DC converters, and motion control circuits.
This model features an N-channel design and utilizes enhancement mode for reliable switching performance.
The country of origin for this MOSFET is India.
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