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onsemi PowerTrench Type P-Channel MOSFET, 13 A, 30 V, Enhancement Mode, 8-Pin SOIC Package FDS6679AZ
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.5mm |
| Length | 5mm |
| Model | FDS6679AZ |
| Width | 4mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 13A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 9mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.5W |
| Typical Gate Charge Qg @ Vgs | 68nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | -1.2V |
Key Features
- Maximum continuous drain current of 13 amperes ensures robust current handling.
- Drain-source voltage rated at 30 volts suitable for low to medium voltage circuits.
- Enhancement mode channel operation for precise control.
- Packaged in compact 8-pin SOIC for surface mounting on PCBs.
- Low maximum drain-source resistance of 9 milliohms reduces power loss.
- High maximum power dissipation of 2.5 watts supports demanding power applications.
- Wide operating temperature range from -55°C up to 150°C enhances reliability in harsh environments.
- Gate charge of 68 nanocoulombs facilitates fast switching performance.
Product Description
onsemi FDS6679AZ PowerTrench Type P-Channel MOSFET is designed as an efficient power switch optimized for system efficiency and power density. Featuring a shielded-gate structure, this device significantly lowers the figure of merit (FOM), promoting lower conduction losses and enhanced switching speeds.
This MOSFET supports a maximum continuous drain current of 13 A and a maximum drain-source voltage of 30 V, making it suitable for a wide range of power management applications.
With an enhancement mode channel and low maximum drain-source resistance of 9 mΩ, it operates with minimal power dissipation up to 2.5 W. Its typical gate charge of 68 nC and soft reverse recovery body diode enable fast switching and efficient synchronous rectification in AC/DC power supplies.
The device’s package is an 8-pin SOIC surface-mount, which facilitates easy integration into compact PCB layouts, measuring 5 mm by 4 mm with a thickness of 1.5 mm. The transistor maintains performance over a broad temperature range from -55°C to 150°C, ensuring stable operation in industrial and automotive environments.
This MOSFET does not include automotive standards certification but is built to high-quality semiconductor manufacturing standards for robust industrial and electronic applications including power supplies, motor drives, and signal switching circuits.
Maximum continuous drain current of 13 amperes. Maximum drain-source voltage of 30 volts. Low Rds(on) of 9 milliohms. Maximum power dissipation rated at 2.5 watts. Wide operating temperature range from -55°C to 150°C. Gate charge optimized at 68 nanocoulombs for fast switching.
Compact 8-pin SOIC surface-mount package. Soft reverse recovery body diode for efficient switching. Package dimensions: 5mm length x 4mm width x 1.5mm height.
This product is ideal for electronic component applications requiring efficient power switching, such as industrial automation, power supply design, and consumer electronics. Explore more semiconductor components and MOSFETs on EnvMart for advanced electronic engineering projects.
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Frequently Asked Questions
The maximum continuous drain current for this model is 13 amperes.
It is rated for a maximum drain-source voltage of 30 volts.
This MOSFET is packaged in an 8-pin SOIC surface-mount configuration.
The low maximum drain-source resistance is 9 milliohms, which helps reduce power loss.
It operates over a wide temperature range from -55°C to 150°C.
The typical gate charge is optimized at 68 nanocoulombs.
It is suitable for power management applications, including power supplies, motor drives, and signal switching circuits.
The dimensions are 5 mm in length, 4 mm in width, and 1.5 mm in height.
The maximum power dissipation is rated at 2.5 watts.
This model utilizes an enhancement mode channel type.
The maximum gate-source voltage is -25V to +25V.
The forward voltage is -1.2 volts.
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