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onsemi UltraFET N-Channel MOSFET, 7.5 A, 100 V Enhancement Type, 8-Pin SOIC FDS3672

Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.5mm
Length 5mm
Model FDS3672
Width 4mm
Mount Type Surface
Series UltraFET
Maximum Operating Temperature 150°C
Package Type SOIC
Minimum Operating Temperature -55°C
Pin Count 8
Channel Type N
Maximum Continuous Drain Current Id 7.5A
Maximum Drain Source Voltage Vds 100V
Maximum Drain Source Resistance Rds 23mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 2.5W
Typical Gate Charge Qg @ Vgs 28nC
Maximum Gate Source Voltage Vgs -20, +20V

Key Features

  • UltraFET technology enhances power conversion efficiency.
  • Low RDS(on) of 23mΩ ensures reduced conduction losses.
  • Typical gate charge of 28nC enables fast switching.
  • Operates reliably from -55°C up to 150°C.
  • Enhancement mode device suitable for DC-DC converters and motor drivers.
  • Surface mount design allows easy PCB integration.
  • Maximum power dissipation of 2.5 W supports moderate thermal loads.

Product Description

onsemi FDS3672 is an UltraFET® N-Channel MOSFET featuring a continuous drain current rating of 7.5 A and a maximum drain-source voltage of 100 V. It employs an enhancement mode channel and comes in a compact 8-pin SOIC surface mount package with dimensions 5 mm in length, 4 mm in width, and 1.5 mm in height. This device operates efficiently at temperatures ranging from -55°C to 150°C, making it suitable for a variety of industrial and commercial electronics applications.

The UltraFET technology incorporated in the FDS3672 offers benchmark efficiency optimized for high-frequency power conversion tasks. It provides very low drain-source on-resistance (typically 23 milliohms), low equivalent series resistance (ESR), and minimal total and Miller gate charge (28nC), factors key to reducing switching and conduction losses.

This MOSFET is designed for high-frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management circuits. The robust device withstands energy surges in avalanche mode, and features a diode with low reverse recovery time and stored charge, enhancing performance in inductive load switching.

The maximum gate-source voltage rating of -20 V to +20 V protects the device from gate overstress, while the maximum power dissipation of 2.5 W is suitable for moderate power applications. The device is aimed at industrial, automotive (non-automotive certified), manufacturing, and commercial electronics markets requiring efficient power management solutions.

packaging in standard SOIC format facilitates automated assembly and reliable mounting on printed circuit boards. The device is provided as new condition and is made in India. UltraFET technology offers high efficiency in power conversion.

Low RDS(on) minimizes conduction losses. Fast switching enabled by low gate charge of 28nC. Wide operating temperature range (-55°C to 150°C). Surface mount 8-pin SOIC package for compact applications. Designed for DC-DC converters, motor drivers, and switching regulators.

Contains avalanche energy handling capability with low reverse recovery diode. Operational voltage up to 100 V, continuous drain current 7.5 A. Explore more products in MOSFETs and power management devices on EnvMart.

onsemi UltraFET N-Channel MOSFET, 7.5 A, 100 V Enhancement Type, 8-Pin SOIC FDS3672
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Frequently Asked Questions

The FDS3672 has a maximum continuous drain current rating of 7.5 A.

It has a maximum drain-source voltage of 100 V.

The typical gate charge is 28 nC, which enables fast switching.

The on-resistance (RDS(on)) is typically 23 mΩ, which helps to minimize conduction losses.

This model operates efficiently at temperatures ranging from -55°C to 150°C.

The dimensions of this MOSFET are 5 mm in length, 4 mm in width, and 1.5 mm in height.

It comes in an 8-pin SOIC surface mount package.

This model is designed for high-frequency DC-DC converters, switching regulators, motor drivers, and power management circuits.

The maximum power dissipation is 2.5 W, suitable for moderate power applications.

The maximum gate-source voltage rating is -20 V to +20 V.

The FDS3672 is manufactured in India.

It utilizes UltraFET technology, which enhances power conversion efficiency.

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