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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.5mm |
| Length | 5mm |
| Model | FDS3672 |
| Width | 4mm |
| Mount Type | Surface |
| Series | UltraFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 7.5A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 23mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.5W |
| Typical Gate Charge Qg @ Vgs | 28nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
onsemi FDS3672 is an UltraFET® N-Channel MOSFET featuring a continuous drain current rating of 7.5 A and a maximum drain-source voltage of 100 V. It employs an enhancement mode channel and comes in a compact 8-pin SOIC surface mount package with dimensions 5 mm in length, 4 mm in width, and 1.5 mm in height. This device operates efficiently at temperatures ranging from -55°C to 150°C, making it suitable for a variety of industrial and commercial electronics applications.
The UltraFET technology incorporated in the FDS3672 offers benchmark efficiency optimized for high-frequency power conversion tasks. It provides very low drain-source on-resistance (typically 23 milliohms), low equivalent series resistance (ESR), and minimal total and Miller gate charge (28nC), factors key to reducing switching and conduction losses.
This MOSFET is designed for high-frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management circuits. The robust device withstands energy surges in avalanche mode, and features a diode with low reverse recovery time and stored charge, enhancing performance in inductive load switching.
The maximum gate-source voltage rating of -20 V to +20 V protects the device from gate overstress, while the maximum power dissipation of 2.5 W is suitable for moderate power applications. The device is aimed at industrial, automotive (non-automotive certified), manufacturing, and commercial electronics markets requiring efficient power management solutions.
packaging in standard SOIC format facilitates automated assembly and reliable mounting on printed circuit boards. The device is provided as new condition and is made in India. UltraFET technology offers high efficiency in power conversion.
Low RDS(on) minimizes conduction losses. Fast switching enabled by low gate charge of 28nC. Wide operating temperature range (-55°C to 150°C). Surface mount 8-pin SOIC package for compact applications. Designed for DC-DC converters, motor drivers, and switching regulators.
Contains avalanche energy handling capability with low reverse recovery diode. Operational voltage up to 100 V, continuous drain current 7.5 A. Explore more products in MOSFETs and power management devices on EnvMart.
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