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onsemi PowerTrench Type P-Channel MOSFET 20 V, 2.4 A, Enhancement Mode, SOT-23 Package FDN304PZ
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 940μm |
| Length | 2.92mm |
| Model | FDN304PZ |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 2.4A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 52mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 500mW |
| Typical Gate Charge Qg @ Vgs | 12nC |
| Maximum Gate Source Voltage Vgs | -8, +8V |
| Forward Voltage Vf | -1.2V |
Key Features
- Enhancement mode MOSFET designed for efficient switching in power applications.
- Maximum continuous drain current of 2.4 amperes ensures reliable performance.
- Low drain-source resistance of 52 milliohms reduces power loss during operation.
- Typical gate charge of 12 nanocoulombs optimizes switching speed and reduces gate drive power.
- Maximum power dissipation of 500 milliwatts supports robust thermal handling.
- Wide operating temperature range from -55°C to 150°C for harsh environments.
- Compact dimensions with SOT-23 package ensure ease of integration in dense circuits.
- Soft body diode characteristic eliminates the need for snubber circuits in many power supply designs.
Product Description
onsemi FDN304PZ PowerTrench Type P-Channel MOSFET is a high-performance discrete semiconductor device designed for switching and amplification in power electronics. It features an enhancement mode P-Channel MOSFET with a maximum continuous drain current rating of 2.4 A and a drain-source voltage capability of 20 V, making it suitable for low-voltage switching applications.
The device comes in a compact 3-pin SOT-23 surface mount package that enables effective thermal management and compact PCB layouts. Its low drain-source resistance of 52 milliohms minimizes conduction losses, enhancing system efficiency. The typical gate charge of 12 nC at Vgs improves switching speed and reduces gate driver power requirements.
Operating over a broad temperature range from -55°C to 150°C, the FDN304PZ is designed for demanding industrial, automotive (non-certified), and commercial electronics applications. Onsemi PowerTrench MOSFETs utilize advanced shielded-gate structures to provide superior switching performance and reduced figure of merit compared to previous generations.
The soft reverse recovery characteristic of the body diode helps eliminate snubber circuits or allows replacement of higher-voltage rating MOSFETs in synchronous rectification circuits in AC/DC power supplies. The FDN304PZ is ideal for compact power management, DC/DC converters, load switching, and signal amplification where high efficiency and space saving are critical.
Enhancement mode P-Channel MOSFET construction for controlled switching. PowerTrench series offers advanced switching efficiency and density. Surface mount SOT-23 package with 3 pins for easy integration. Maximum ratings: 2.4 A continuous current, 20 V drain-source voltage.
Low Rds(on) at 52 milliohms reduces conduction losses. Wide temperature range operation from -55°C to 150°C. Typical gate charge of 12 nC ensures fast switching. Max power dissipation of 500 mW supports robust operation.
Soft body diode reduces external component count in power circuits.
This component is a fundamental building block in industrial electronic designs, including DC power regulation, load control, and switching power supplies. Its robust characteristics ensure reliability and efficiency in harsh electrical environments. Explore more onsemi PowerTrench MOSFETs and select the optimal device for your power management needs at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 2.4 A.
The FDN304PZ has a maximum drain-source voltage capability of 20 V.
This model comes in a SOT-23 package with dimensions of 2.92 mm in length, 1.4 mm in width, and a height of 940 μm.
The typical gate charge for this MOSFET is 12 nC at Vgs.
The maximum power dissipation for the FDN304PZ is 500 mW.
This model operates over a wide temperature range from -55°C to 150°C.
The maximum drain-source resistance (Rds) for this P-Channel MOSFET is 52 mΩ.
The FDN304PZ supports surface mounting.
This model has a pin count of 3.
The channel mode of this MOSFET is enhancement mode.
The FDN304PZ is suitable for applications such as DC power regulation, load control, and switching power supplies.
The maximum gate-source voltage (Vgs) for this model is -8 V to +8 V.
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