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onsemi PowerTrench Type P-Channel MOSFET, Enhancement Mode, 2 A, 20 V, 3-Pin SOT-23 FDN342P

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onsemi PowerTrench Type P-Channel MOSFET, Enhancement Mode, 2 A, 20 V, 3-Pin SOT-23 FDN342P

Name: onsemi PowerTrench Type P-Channel MOSFET, Enhancement Mode, 2 A, 20 V, 3-Pin SOT-23 FDN342P
Brand: onsemi
SKU: 347498
Price: 0.3 USD
Availability: InStock

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Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	940μm
Length	2.92mm
Model	FDN342P
Width	1.4mm
Mount Type	Surface
Series	PowerTrench
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	Type P
Maximum Continuous Drain Current Id	2A
Maximum Drain Source Voltage Vds	20V
Maximum Drain Source Resistance Rds	80mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	500mW
Typical Gate Charge Qg @ Vgs	6.3nC
Maximum Gate Source Voltage Vgs	-12, +12V
Forward Voltage Vf	-1.2V

Key Features

This MOSFET features a low maximum drain-source resistance of 80 milliohms ensuring efficient switching.
It supports a maximum power dissipation of 500 milliwatts for reliable operation.
Operates over a broad temperature range from -55°C minimum to 150°C maximum.
Typical gate charge of 6.3 nanocoulombs accelerates switching speed.
Designed with a shielded-gate PowerTrench technology for improved system efficiency.
Soft body diode reduces the need for snubber circuits in synchronous rectification.

Product Description

onsemi FDN342P PowerTrench Type P-Channel MOSFET is a surface-mount device tailored for efficient power switching applications. Rated for a continuous drain current of 2 amperes and a drain-source voltage of 20 volts, this enhancement mode transistor utilizes advanced PowerTrench technology to optimize system efficiency and reduce power losses.

Its low maximum drain-source resistance of 80 milliohms minimizes conduction losses, while the typical gate charge of 6.3 nanocoulombs facilitates fast switching transitions, improving overall performance in AC/DC power supplies.

The device supports operating temperatures from -55°C up to 150°C, making it suitable for industrial and commercial applications with varying thermal requirements. A soft reverse recovery body diode further enhances switching efficiency by suppressing voltage spikes and eliminating the need for additional snubber circuitry.

The compact 3-pin SOT-23 package, with physical dimensions of 2.92 mm length, 1.4 mm width, and 940 microns height, fits space-restricted layouts commonly found in electronics manufacturing and repair.

This PowerTrench MOSFET is ideal for applications in industrial electronics, power management systems, and low-voltage switching circuits where efficient and reliable P-channel MOSFET operation is critical.

This MOSFET features a low maximum drain-source resistance of 80 milliohms ensuring efficient switching. It supports a maximum power dissipation of 500 milliwatts for reliable operation. Operates over a broad temperature range from -55°C minimum to 150°C maximum.

Typical gate charge of 6.3 nanocoulombs accelerates switching speed. Designed with a shielded-gate PowerTrench technology for improved system efficiency. Soft body diode reduces the need for snubber circuits in synchronous rectification.

Compact form factor with dimensions: length 2.92 mm, width 1.4 mm, height 940 microns. For browsing more semiconductor products and MOSFET options, explore EnvMart's dedicated Electronics & Electricals category.