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onsemi PowerTrench Type P-Channel MOSFET, 2.6 A, 12 V Enhancement, 3-Pin SOT-23 FDN306P
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 940μm |
| Length | 2.92mm |
| Model | FDN306P |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 2.6A |
| Maximum Drain Source Voltage Vds | 12V |
| Maximum Drain Source Resistance Rds | 40mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 500mW |
| Typical Gate Charge Qg @ Vgs | 12nC |
| Maximum Gate Source Voltage Vgs | -8, +8V |
| Forward Voltage Vf | -1.2V |
Key Features
- Offers low on-resistance of 40 milliohms for efficient switching.
- Capable of handling maximum power dissipation of 500 milliwatts.
- Designed to operate within a temperature range from -55°C to 150°C.
- Typical gate charge is only 12 nanocoulombs improving switching performance.
- Features a soft body diode to reduce snubber circuit needs.
- Compact dimensions with 2.92 mm length and 1.4 mm width.
- Package type SOT-23 suitable for surface mounting.
- Maximum gate-source voltage rating of ±8 V ensures robust gate control.
Product Description
onsemi FDN306P PowerTrench Type P-Channel MOSFET is an advanced semiconductor device designed for efficient power control in electronic circuits. Featuring a 3-pin SOT-23 package and an enhancement mode configuration, it is optimized for fast switching and low conduction losses in compact spaces.
This transistor supports a maximum continuous drain current of 2.6 A and a drain-source voltage up to 12 V, making it suitable for low-voltage power management in various industrial and commercial electronics applications.
The device incorporates onsemi's PowerTrench technology, which reduces gate charge to 12 nC and features a soft reverse recovery body diode, significantly improving synchronous rectification efficiency and enabling elimination of snubber circuits where applicable.
Compact physical dimensions of approximately 2.92 mm length, 1.4 mm width, and 940 μm height make it ideal for tight spaces in embedded systems or handheld devices. It maintains reliable operation across a broad temperature range from -55°C up to 150°C, supporting demanding environments.
Low on-resistance of 40 mΩ minimizes power losses during switching. Surface-mount SOT-23 package ensures easy PCB integration. Robust gate voltage tolerance at ±8 V provides stable drive control. Maximum power dissipation of 500 mW enables steady thermal performance.
Enhancement mode operation facilitates efficient power modulation. Soft body diode reduces electromagnetic interference and improves efficiency. Wide temperature specification supports automotive and industrial grade applications.
This MOSFET is well-suited for use in power supplies, industrial equipment, consumer electronics, and automotive electronics where efficient switching and compact design are critical. Its enhanced features help improve overall system efficiency and reliability.
Explore the comprehensive range of MOSFET devices from onsemi for varied applications at EnvMart, your trusted industrial electronics component distributor.
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Frequently Asked Questions
The maximum continuous drain current for this model is 2.6 A.
It can handle a maximum drain-source voltage of 12 V.
The on-resistance is 40 milliohms, which helps minimize power losses during switching.
The dimensions of the SOT-23 package are approximately 2.92 mm in length, 1.4 mm in width, and 940 μm in height.
The typical gate charge is 12 nanocoulombs, which improves switching performance.
It operates within a temperature range from -55°C to 150°C.
This model uses surface mounting, suitable for PCB integration.
The maximum power dissipation is 500 milliwatts.
The maximum gate-source voltage rating is ±8 V, ensuring robust gate control.
This MOSFET is suitable for power supplies, industrial equipment, consumer electronics, and automotive electronics.
It features a soft body diode, which helps reduce snubber circuit needs and improves efficiency.
This model has a P-channel type configuration, designed for enhancement mode operation.
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