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onsemi Isolated PowerTrench 2 Type P and N-Channel MOSFET, 3.7 A, 20 V Enhancement Mode, 6-Pin MLP FDMA1032CZ

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onsemi Isolated PowerTrench 2 Type P and N-Channel MOSFET, 3.7 A, 20 V Enhancement Mode, 6-Pin MLP FDMA1032CZ

Name: onsemi Isolated PowerTrench 2 Type P and N-Channel MOSFET, 3.7 A, 20 V Enhancement Mode, 6-Pin MLP FDMA1032CZ
Brand: onsemi
SKU: 347489
Price: 0.43 USD
Availability: InStock

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Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	0.75mm
Length	2mm
Model	FDMA1032CZ
Width	2mm
Mount Type	Surface
Series	PowerTrench
Maximum Operating Temperature	150°C
Package Type	MLP
Minimum Operating Temperature	-55°C
Pin Count	6
Number of Elements per Chip	2
Channel Type	Type P, Type N
Maximum Continuous Drain Current Id	3.7A
Maximum Drain Source Voltage Vds	20V
Maximum Drain Source Resistance Rds	95mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	1.4W
Typical Gate Charge Qg @ Vgs	4nC
Maximum Gate Source Voltage Vgs	-12, +12V
Forward Voltage Vf	0.7V
Transistor Configuration	Isolated

Key Features

Dual N and P-channel MOSFET configuration optimized for enhanced power density and system efficiency.
Maximum continuous drain current of 3.7 amperes and maximum drain-source voltage rating of 20 volts.
Low typical gate charge of 4 nanocoulombs facilitating fast switching.
Surface mount 6-pin MLP package with small form factor dimensions of 2 mm x 2 mm x 0.75 mm height.
Operating temperature range from -55°C to 150°C ensuring robust performance in varied conditions.
Body diode with soft reverse recovery characteristics to minimize switching losses.
Maximum power dissipation of 1.4 watts suitable for efficient thermal management.
Enhancement mode operation with maximum gate-source voltage of ±12 volts.

Product Description

onsemi FDMA1032CZ is an Isolated PowerTrench 2 MOSFET combining Type P and Type N channels in a compact 6-pin MLP surface mount package. This device is engineered to deliver increased system efficiency and power density through optimized power switching performance.

The MOSFET features a maximum continuous drain current of 3.7 A and a maximum drain-source voltage rating of 20 V, suitable for low-voltage power management applications. It employs shielded-gate technology to provide excellent charge balance and a low figure of merit, leading to reduced switching losses and improved device reliability.

Its small typical gate charge of 4 nC and soft reverse recovery body diode enable fast and efficient switching, making it ideal for synchronous rectification in AC/DC power supplies and related industrial electronics. The device supports an operating temperature range from -55°C to 150°C, allowing use in harsh environments.

The compact MLP package measures 2 mm by 2 mm with a height of 0.75 mm, supporting surface mount applications with tight PCB space constraints. The isolated transistor configuration provides design flexibility, and the device can handle a maximum power dissipation of 1.4 W.

Typical applications include power management and control circuits in industrial, consumer electronics, and automotive electronic systems where efficient switching and compact size are critical.

Dual N and P-channel MOSFETs in one package for versatile circuit implementation. Low gate charge and soft body diode for reduced switching losses. High maximum drain current and voltage ratings for robust operation. Compact surface mount MLP package for space-constrained applications.

Wide operating temperature range for reliable performance in demanding environments. PowerTrench technology ensures high efficiency and power density. Explore additional power and discrete semiconductor components at EnvMart to meet diverse industrial and electronic design requirements.