DiodesZetex N-Channel MOSFET 320 mA 100 V Enhancement Mode 3-Pin E-Line ZVN2110ASTZ

DiodesZetex ZVN2110ASTZ is a new N-Channel MOSFET designed for electronic and power management applications. It supports a continuous drain current of 320 mA and withstands a maximum drain source voltage of 100 V. The device operates as an enhancement mode transistor in a 3-pin E-Line package type that facilitates through hole mounting on printed circuit boards.

With a maximum gate source voltage rating ranging from -20 V to +20 V, it offers robust control capabilities. The MOSFET exhibits a low maximum drain source resistance of 4 ohms, enabling efficient conduction and switching performance. It has been validated to function reliably within an operating temperature range from -55°C up to 150°C, making it suitable for various demanding industrial and automotive environments.

The compact package measures 2.41 mm wide, 4.77 mm long, and 4.01 mm high, optimizing space on circuit boards. This component adheres to stringent automotive quality standards including AEC-Q200, AEC-Q100, and AEC-Q101, thereby ensuring durability and reliability in automotive electronic systems.

Typical applications include industrial electronics, automotive electronics, power control systems, and other use cases requiring small, reliable N-Channel MOSFETs for switching and amplification purposes. The device is engineered to meet high-quality standards and enhance production efficiency within electronic manufacturing.

This enhancement mode MOSFET supports a maximum gate source voltage of -20 to +20 V. It features a low maximum drain source resistance of 4 ohms ensuring efficient switching. The device operates in a broad temperature range from -55°C to 150°C.

The package type is E-Line with through hole mounting for easy PCB insertion. It complies with automotive standards AEC-Q200, AEC-Q100, and AEC-Q101. Compact device dimensions: width 2.41 mm, length 4.77 mm, height 4.01 mm.

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