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DiodesZetex Type P-Channel MOSFET 1.6 A 30 V Enhancement Mode 3-Pin SOT-23 ZXMP3A13FTA

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1mm
Length 3.05mm
Model ZXMP3A13FTA
Width 1.4mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101
Channel Type Type P
Maximum Continuous Drain Current Id 1.6A
Maximum Drain Source Voltage Vds 30V
Maximum Drain Source Resistance Rds 210mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 806mW
Typical Gate Charge Qg @ Vgs 6.4nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf -0.95V

Key Features

  • Rated continuous drain current of 1.6 amperes for moderate power applications.
  • Maximum drain-source voltage of 30 volts suitable for low voltage circuits.
  • Enhancement mode channel operation ensures efficient switching.
  • Compact surface mount SOT-23 package with 3 pins for easy PCB integration.
  • Low maximum drain-source resistance of 210 milliohms reduces conduction losses.
  • Operating temperature range from -55°C to 150°C enables use in harsh environments.
  • Maximum power dissipation of 806 milliwatts supports thermal stability.
  • Typical gate charge of 6.4 nanocoulombs allows fast switching speeds.

Product Description

DiodesZetex ZXMP3A13FTA is a P-Channel MOSFET designed for efficient switching and amplification in low voltage electronic circuits. It supports a maximum continuous drain current of 1.6 amperes and a maximum drain-source voltage of 30 volts, making it suitable for power management and signal switching applications in consumer electronics and automotive systems.

Encased in a compact 3-pin SOT-23 surface mount package, this MOSFET is ideal for space-constrained PCB layouts. The device uses enhancement mode operation, providing reliable conduction when triggered.

The maximum drain-source resistance of 210 milliohms ensures minimal power loss during conduction, improving overall efficiency. Thermal performance is robust, with a maximum power dissipation rating of 806 milliwatts and an operating temperature range from -55°C to 150°C, allowing deployment in demanding industrial and automotive environments.

The transistor features a typical gate charge of 6.4 nanocoulombs at the gate-source voltage, enabling rapid switching for high-frequency applications. It also meets the AEC-Q101 automotive qualification standard, ensuring durability and quality for automotive-grade electronics.

Rated continuous drain current of 1.6 amperes for moderate power applications. Maximum drain-source voltage of 30 volts suitable for low voltage circuits. Enhancement mode channel operation ensures efficient switching. Compact surface mount SOT-23 package with 3 pins for easy PCB integration.

Low maximum drain-source resistance of 210 milliohms reduces conduction losses. Wide operating temperature range from -55°C to 150°C enables use in harsh environments. Maximum power dissipation of 806 milliwatts supports thermal stability.

Typical gate charge of 6.4 nanocoulombs allows fast switching speeds. Compliance with AEC-Q101 automotive standard for enhanced reliability. Small form-factor with dimensions approximately 3.05 mm length, 1.4 mm width, and 1.0 mm height.

This MOSFET is widely used in industrial controls, automotive electronics, communication devices, and general-purpose power switching. Its compact size and reliable parameters make it an optimal choice for modern electronic designs.

Explore more semiconductor and discrete component options in the MOSFET category at EnvMart for your electronic manufacturing and repair requirements.

DiodesZetex Type P-Channel MOSFET 1.6 A 30 V Enhancement Mode 3-Pin SOT-23 ZXMP3A13FTA
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Frequently Asked Questions

The maximum continuous drain current for this model is 1.6 amperes, suitable for moderate power applications.

The maximum drain-source voltage is 30 volts, making it suitable for low voltage circuits.

This model comes in a SOT-23 package type with 3 pins, facilitating easy PCB integration.

The operating temperature range is from -55°C to 150°C, allowing use in harsh environments.

The maximum power dissipation is rated at 806 milliwatts, supporting thermal stability in applications.

The typical gate charge is 6.4 nanocoulombs, enabling fast switching speeds.

The maximum drain-source resistance is 210 milliohms, which reduces conduction losses during operation.

This model complies with the AEC-Q101 automotive qualification standard, ensuring reliability for automotive applications.

It is a Type P channel MOSFET that operates in enhancement mode, providing efficient switching capabilities.

The dimensions are approximately 3.05 mm in length, 1.4 mm in width, and 1.0 mm in height.

This model supports surface mounting, making it suitable for compact PCB layouts.

This MOSFET is widely used in industrial controls, automotive electronics, communication devices, and general-purpose power switching.

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