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| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 1mm |
| Length | 3.05mm |
| Model | ZXMP3A13FTA |
| Width | 1.4mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 1.6A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 210mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 806mW |
| Typical Gate Charge Qg @ Vgs | 6.4nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -0.95V |
DiodesZetex ZXMP3A13FTA is a P-Channel MOSFET designed for efficient switching and amplification in low voltage electronic circuits. It supports a maximum continuous drain current of 1.6 amperes and a maximum drain-source voltage of 30 volts, making it suitable for power management and signal switching applications in consumer electronics and automotive systems.
Encased in a compact 3-pin SOT-23 surface mount package, this MOSFET is ideal for space-constrained PCB layouts. The device uses enhancement mode operation, providing reliable conduction when triggered.
The maximum drain-source resistance of 210 milliohms ensures minimal power loss during conduction, improving overall efficiency. Thermal performance is robust, with a maximum power dissipation rating of 806 milliwatts and an operating temperature range from -55°C to 150°C, allowing deployment in demanding industrial and automotive environments.
The transistor features a typical gate charge of 6.4 nanocoulombs at the gate-source voltage, enabling rapid switching for high-frequency applications. It also meets the AEC-Q101 automotive qualification standard, ensuring durability and quality for automotive-grade electronics.
Rated continuous drain current of 1.6 amperes for moderate power applications. Maximum drain-source voltage of 30 volts suitable for low voltage circuits. Enhancement mode channel operation ensures efficient switching. Compact surface mount SOT-23 package with 3 pins for easy PCB integration.
Low maximum drain-source resistance of 210 milliohms reduces conduction losses. Wide operating temperature range from -55°C to 150°C enables use in harsh environments. Maximum power dissipation of 806 milliwatts supports thermal stability.
Typical gate charge of 6.4 nanocoulombs allows fast switching speeds. Compliance with AEC-Q101 automotive standard for enhanced reliability. Small form-factor with dimensions approximately 3.05 mm length, 1.4 mm width, and 1.0 mm height.
This MOSFET is widely used in industrial controls, automotive electronics, communication devices, and general-purpose power switching. Its compact size and reliable parameters make it an optimal choice for modern electronic designs.
Explore more semiconductor and discrete component options in the MOSFET category at EnvMart for your electronic manufacturing and repair requirements.
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