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DiodesZetex P-Channel MOSFET 1.1 A 60 V Enhancement Surface Mount SOT-23 3-Pin ZXMP6A13F
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 1mm |
| Length | 3.05mm |
| Model | ZXMP6A13F |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | ZXMP6A13F |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 1.1A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 400mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 806mW |
| Typical Gate Charge Qg @ Vgs | 5.9nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -0.95V |
Key Features
- This MOSFET operates reliably between -55°C to 150°C.
- It features a low maximum drain-source resistance of 400 mΩ.
- The package dimensions are compact with a height of 1 mm, length of 3.05 mm, and width of 1.4 mm.
- Maximum power dissipation is rated at 806 mW, suitable for compact electronic designs.
- The device complies with automotive standard AEC-Q101, ensuring automotive-grade quality.
- Typical gate charge is 5.9 nC at gate-source voltage.
- Gate-source voltage maximum ranges from -20 V to +20 V, allowing robust control.
- Its forward voltage is -0.95 V for efficient switching performance.
Product Description
DiodesZetex ZXMP6A13F is a P-Channel MOSFET designed for surface mount applications, featuring an enhancement mode channel and supplied in a compact SOT-23 package with 3 pins. It supports a maximum continuous drain current of 1.1 A and a maximum drain-source voltage of 60 V, making it suitable for power management and switching functions in electronic circuits.
The device handles maximum power dissipation of 806 mW and supports operating temperatures ranging from -55°C to 150°C, making it highly reliable for industrial, automotive, and consumer electronics environments. Its low drain-source resistance of 400 mΩ minimizes conduction losses, improving overall efficiency.
The compact package dimensions (1 mm height, 3.05 mm length, 1.4 mm width) facilitate high-density PCB layouts and surface mounting. The ZXMP6A13F complies with the AEC-Q101 automotive standard, assuring durability and performance for automotive grade applications.
Additional technical features include a typical gate charge of 5.9 nC, forward voltage of -0.95 V, and a gate-source voltage range up to ±20 V, which contribute to precise and efficient MOSFET switching control.
This device is ideal for use in industrial power converters, battery management, load switching, and general purpose low-voltage power applications in electronics manufacturing, automotive electronics, and instrumentation.
This MOSFET operates reliably between -55°C to 150°C. It features a low maximum drain-source resistance of 400 mΩ. The package dimensions are compact with a height of 1 mm, length of 3.05 mm, and width of 1.4 mm. Maximum power dissipation is rated at 806 mW, suitable for compact electronic designs.
The device complies with automotive standard AEC-Q101, ensuring automotive-grade quality. Typical gate charge is 5.9 nC at gate-source voltage. Gate-source voltage maximum ranges from -20 V to +20 V, allowing robust control.
Its forward voltage is -0.95 V for efficient switching performance. Explore more electronic semiconductor components for your industrial and automotive applications through EnvMart's extensive catalog.
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Frequently Asked Questions
The maximum continuous drain current for this model is 1.1 A.
It has a maximum drain-source voltage rating of 60 V.
The MOSFET operates reliably between -55°C and 150°C.
The package dimensions are 1 mm in height, 3.05 mm in length, and 1.4 mm in width.
The maximum power dissipation is rated at 806 mW.
The typical gate charge is 5.9 nC at gate-source voltage.
The maximum gate-source voltage ranges from -20 V to +20 V.
It complies with the AEC-Q101 automotive standard.
The forward voltage is -0.95 V.
The maximum drain-source resistance is 400 mΩ, which minimizes conduction losses and improves overall efficiency.
This model supports surface mounting.
It is suitable for power management, switching functions, battery management, and load switching in various electronic applications.
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