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DiodesZetex N-Channel MOSFET, 30 V, 2 A, Enhancement Mode, 3-Pin SOT-23 ZXMN3A01FTA
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 1mm |
| Length | 3.05mm |
| Model | ZXMN3A01FTA |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | ZXMN3A01F |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 2A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 120mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 806mW |
| Typical Gate Charge Qg @ Vgs | 3.9nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 950mV |
Key Features
- Designed for surface mount applications with a low 120 mΩ drain-source resistance.
- Characterized by a maximum power dissipation of 806 mW for efficient energy handling.
- Operates reliably over a wide temperature range from -55°C to 150°C.
- Equipped with an enhancement mode channel for controlled switch behavior.
- Features a typical gate charge of 3.9 nC, enabling fast switching.
- Compliant with the automotive standard AEC-Q101 for harsh environment durability.
- Package dimensions measure 3.05 mm length, 1.4 mm width, and 1 mm height.
Product Description
DiodesZetex ZXMN3A01FTA is a high-performance N-Channel MOSFET tailored for electronic applications requiring efficient switching and amplification capabilities. This device supports a drain-source voltage of 30 V and a continuous drain current of 2 A, making it well suited for low-voltage power management and signal processing needs in industrial, automotive, and consumer electronics.
The transistor is packaged in a space-saving 3-pin SOT-23 surface mount outline, facilitating compact PCB designs without sacrificing thermal performance. It features a low drain-source on-resistance of 120 milliohms, reducing power loss and heat generation during operation.
Operating reliably across a wide temperature spectrum from -55°C to 150°C, the ZXMN3A01FTA is ideal for harsh environment electronics including automotive and industrial systems. Its enhancement mode channel type ensures it switches off at zero gate-to-source voltage, providing predictable and efficient control characteristics.
The MOSFET’s typical gate charge of 3.9 nC supports rapid switching transitions, which is critical in high-frequency applications and switching power supplies. With a maximum power dissipation rating of 806 mW, it accommodates moderate power loads while maintaining device integrity.
Compact 3-pin SOT-23 surface mount package for space-efficient layouts. Maximum continuous drain current of 2 A ideal for low-power load switching. Robust voltage rating of 30 V suitable for a variety of control circuits.
Low drain-source resistance minimizes conduction losses. Wide operating temperature range supports automotive and industrial applications. Meets AEC-Q101 automotive qualification standards for reliability. Designed for enhancement mode switching with fast gate response.
Widely used in power management modules, DC-DC converters, and switching regulators, the ZXMN3A01FTA MOSFET supports diverse industrial, commercial, and automotive electrical applications. Its proven reliability and efficient electrical characteristics make it a preferred component for designers aiming for durable and compact circuit designs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 2 A.
It has a maximum drain-source voltage rating of 30 V.
This MOSFET is packaged in a 3-pin SOT-23 surface mount package.
The typical gate charge is 3.9 nC, which supports fast switching transitions.
The drain-source resistance is 120 mΩ, which helps minimize conduction losses.
It operates reliably over a wide temperature range from -55°C to 150°C.
Yes, it meets the AEC-Q101 automotive qualification standards for reliability.
The maximum power dissipation rating is 806 mW.
The forward voltage is 950 mV.
This model features an N-channel type for enhancement mode switching.
The package dimensions are 3.05 mm in length, 1.4 mm in width, and 1 mm in height.
It is suitable for low-voltage power management and signal processing needs in industrial, automotive, and consumer electronics applications.
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