Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
24/7 Customer Support

Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries

24/7 Customer Support
Save up to 28% with GST Input

Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries

Lowest Price Challenge
# Lowest Price Challenge

If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon

Lowest Price Challenge
100% Original Products

Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase

Vishay N-Channel Enhancement MOSFET, 23 A Continuous Drain Current, 60 V Drain-Source Voltage, TO-252 Package SUD23N06-31-GE3

Category MOSFET Brand Vishay Condition New

Specifications

Country of Origin India
Brand Vishay
Height 2.38mm
Length 6.73mm
Model SUD23N06-31-GE3
Width 6.22mm
Mount Type Surface
Series SUD23N06-31
Maximum Operating Temperature +150°C
Package Type TO-252
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 23A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 31mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 31.25W
Typical Gate Charge Qg @ Vgs 11nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1V
N-Channel MOSFET Transistor, 23 A, 60 V, 3-Pin DPAK Vishay SUD23N06-31L-E3Brand Vishay

Key Features

  • Supports continuous drain current up to 23 A with a maximum drain-source voltage of 60 V.
  • Features low on-state resistance of 31 milliohms to minimize conduction losses.
  • Typical gate charge of 11 nanocoulombs enables fast switching and efficient driving.
  • Maximum power dissipation rated at 31.25 W suitable for moderate thermal loads.
  • Operates reliably between -55°C and +150°C for extreme environmental conditions.
  • Provided in TO-252 surface mount package for efficient PCB integration.
  • Maximum gate-source voltage limits of -20 to +20 V ensure operational safety.
  • Applications include DC-DC converter switches, motor driver power distribution, battery management, and LED driver circuits.

Product Description

Vishay SUD23N06-31-GE3 is an N-Channel enhancement mode MOSFET engineered to handle moderately high currents and voltages, making it ideal for power management and switching tasks in electronic systems.

Rated for a continuous drain current of 23 A and a maximum drain-source voltage of 60 V, this device delivers efficient conduction with a low Rds(on) of 31 milliohms. Its typical gate charge of 11 nC supports faster switching with low gate drive energy, improving overall system efficiency.

The MOSFET features a maximum power dissipation of 31.25 W, allowing it to withstand significant thermal loads, and its operational temperature range from -55°C to +150°C enables dependable use across a variety of harsh environmental conditions.

Packaged in a TO-252 surface-mount format with 3 pins, it facilitates convenient PCB mounting and thermal management with copper areas and thermal vias.

Typical applications include DC-DC converter switch stages, power distribution in motor drivers, battery management systems, and LED driver power switches. The device’s maximum gate-source voltage rating of ±20 V must be observed for reliable operation.

Continuous drain current of 23 A supports high loads. Max drain-source voltage of 60 V suits medium-voltage switching. Low Rds(on) minimizes conduction losses during operation. Fast switching enabled by low gate charge of 11 nC.

Durable power dissipation rating of 31.25 W supports thermal demands. Wide operating temperature range from -55°C to +150°C. Compact TO-252 package simplifies PCB layout. Maximum gate-source voltage ±20 V limits ensure device safety.

Three-pin configuration for straightforward integration.

This Vishay MOSFET is suited for industrial electronics, power management circuits, automotive electronics, and various commercial electronics requiring reliable switching components. Explore other semiconductor products and power management solutions from Vishay on EnvMart.

Vishay N-Channel Enhancement MOSFET, 23 A Continuous Drain Current, 60 V Drain-Source Voltage, TO-252 Package SUD23N06-31-GE3
Looking to purchase in bulk?
  • Purchase item in bulk quantity
  • Get best price for your business

Comments (0)

No customer reviews for the moment.

Frequently Asked Questions

The maximum continuous drain current for this model is 23 A.

It can handle a maximum drain-source voltage of 60 V.

The on-state resistance (Rds(on)) is 31 milliohms, which minimizes conduction losses.

The typical gate charge is 11 nanocoulombs, enabling fast switching and efficient driving.

The maximum power dissipation is rated at 31.25 W, suitable for moderate thermal loads.

It operates reliably between -55°C and +150°C, making it suitable for extreme environmental conditions.

This model is provided in a TO-252 surface mount package, facilitating efficient PCB integration.

The maximum gate-source voltage limits are -20 V to +20 V, ensuring operational safety.

It has a 3-pin configuration for straightforward integration.

Typical applications include DC-DC converter switches, motor driver power distribution, battery management, and LED driver circuits.

This device complies with RoHS standards.

The dimensions are 2.38 mm in height, 6.73 mm in length, and 6.22 mm in width.

Related Products

Other Products from this brand

Recently Viewed Products

$0.94
$0.92 Save 3%
Tax included
Quantity
Delivery Time Delivered within 0-3 days
  • Global Payments 140+ CountriesGlobal Payments 140+ Countries
  • Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP WorldGlobal Shipping Fedex/UPS/DHL/Aramex/ BlueDart/Delhivery/DP World
  • 24/7 Customer Support Email/Chat/Telephonic Support24/7 Customer Support Email/Chat/Telephonic Support
$0.94
$0.92
Tax included