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| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 2.38mm |
| Length | 6.73mm |
| Model | SUD23N06-31-GE3 |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | SUD23N06-31 |
| Maximum Operating Temperature | +150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 23A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 31mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 31.25W |
| Typical Gate Charge Qg @ Vgs | 11nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1V |
| N-Channel MOSFET Transistor, 23 A, 60 V, 3-Pin DPAK Vishay SUD23N06-31L-E3Brand | Vishay |
Vishay SUD23N06-31-GE3 is an N-Channel enhancement mode MOSFET engineered to handle moderately high currents and voltages, making it ideal for power management and switching tasks in electronic systems.
Rated for a continuous drain current of 23 A and a maximum drain-source voltage of 60 V, this device delivers efficient conduction with a low Rds(on) of 31 milliohms. Its typical gate charge of 11 nC supports faster switching with low gate drive energy, improving overall system efficiency.
The MOSFET features a maximum power dissipation of 31.25 W, allowing it to withstand significant thermal loads, and its operational temperature range from -55°C to +150°C enables dependable use across a variety of harsh environmental conditions.
Packaged in a TO-252 surface-mount format with 3 pins, it facilitates convenient PCB mounting and thermal management with copper areas and thermal vias.
Typical applications include DC-DC converter switch stages, power distribution in motor drivers, battery management systems, and LED driver power switches. The device’s maximum gate-source voltage rating of ±20 V must be observed for reliable operation.
Continuous drain current of 23 A supports high loads. Max drain-source voltage of 60 V suits medium-voltage switching. Low Rds(on) minimizes conduction losses during operation. Fast switching enabled by low gate charge of 11 nC.
Durable power dissipation rating of 31.25 W supports thermal demands. Wide operating temperature range from -55°C to +150°C. Compact TO-252 package simplifies PCB layout. Maximum gate-source voltage ±20 V limits ensure device safety.
Three-pin configuration for straightforward integration.
This Vishay MOSFET is suited for industrial electronics, power management circuits, automotive electronics, and various commercial electronics requiring reliable switching components. Explore other semiconductor products and power management solutions from Vishay on EnvMart.
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