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Vishay N-Channel MOSFET 5.4 A, 400 V Enhancement Mode, 3-Pin TO-220 IRFI740GPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 9.8mm |
| Length | 10.63mm |
| Model | IRFI740GPBF |
| Width | 4.83mm |
| Mount Type | Through Hole |
| Series | IRFI |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 5.4A |
| Maximum Drain Source Voltage Vds | 400V |
| Maximum Drain Source Resistance Rds | 550mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 40W |
| Typical Gate Charge Qg @ Vgs | 66nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 2V |
| N-Channel MOSFET Transistor, 5.4 A, 400 V, 3-Pin Vishay IRFI740GBrand | Vishay |
Key Features
- Designed for high efficiency switching applications.
- Provides a maximum continuous drain current of 5.4 A.
- Maximum drain-source voltage rating of 400 V ensures durability.
- Features a low maximum drain-source resistance of 550 milliohms.
- Supports a maximum power dissipation of 40 W in a compact TO-220 package.
- Operating temperature range from -55°C to 150°C for robust performance.
- Enhanced with typical gate charge of 66 nC for efficient gate control.
- Compatible with through-hole mounting for easy PCB integration.
Product Description
Vishay IRFI740GPBF is a high-performance N-Channel MOSFET transistor designed for power electronics applications that require efficient switching and reliable operation. This enhancement mode MOSFET supports a maximum continuous drain current of 5.4 amperes and a drain-source voltage of 400 volts, housed in a compact TO-220 three-pin package. This device offers a maximum power dissipation of 40 watts, making it suitable for demanding industrial and electronic environments.
The transistor features a low on-resistance of 550 milliohms, reducing conduction losses and improving overall circuit efficiency. Its gate control is optimized with a typical gate charge of 66 nanocoulombs, supporting fast switching capabilities. Operating temperature ranges from - 55°C to a maximum of 150°C allow stable performance in harsh conditions.
Designed for through-hole mounting, the IRFI740GPBF provides easy installation and integration into standard printed circuit boards. The device's forward voltage of 2 volts supports efficient power transfer and thermal management in power control and conversion systems.
This MOSFET is ideal for applications in various sectors including industrial controls, laboratory instrumentation, and general power management devices within the electronics and electricals industry.
Designed for high efficiency switching applications. Maximum continuous drain current of 5.4 A. Drain-source voltage rating of 400 V. Low maximum drain-source resistance of 550 mΩ. Maximum power dissipation of 40 W. Wide operating temperature range from -55°C to 150°C.
Typical gate charge of 66 nC for efficient control. Through-hole mounting for easy PCB installation. Compact TO-220 package with 3 pins. Forward voltage of 2 V for effective power management.
Choose Vishay IRFI740GPBF for reliable power transistor needs. Explore more in our Electronics & Electricals, Discrete Semiconductors category on EnvMart for advanced MOSFET solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 5.4 A.
It has a maximum drain-source voltage rating of 400 V.
The maximum power dissipation is 40 W.
The typical gate charge is 66 nC, which aids in efficient gate control.
The operating temperature range is from -55°C to 150°C.
This model supports through-hole mounting for easy PCB integration.
The dimensions of the TO-220 package are 10.63 mm in length, 4.83 mm in width, and 9.8 mm in height.
The maximum drain-source resistance is 550 milliohms.
The forward voltage is 2 V, which supports effective power management.
This MOSFET is suitable for applications in industrial controls, laboratory instrumentation, and general power management devices.
The channel type is N-channel, designed for enhancement mode operation.
The maximum gate-source voltage is -20V to +20V.
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