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Vishay N-Channel MOSFET 10 A, 60 V Enhancement 3-Pin TO-220 IRLZ14PBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 9.01mm |
| Length | 10.41mm |
| Model | IRLZ14PBF |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Series | IRLZ |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 10A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 200mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 43W |
| Typical Gate Charge Qg @ Vgs | 8.4nC |
| Maximum Gate Source Voltage Vgs | -10, +10V |
| Forward Voltage Vf | 1.6V |
| N-channel logicFET,IRLZ14 10A 60VBrand | Vishay |
Key Features
- High power dissipation capability of 43 watts.
- Enhancement mode operation ensures efficient switching.
- Low maximum drain-source resistance of 200 milliohms.
- Operating temperature range from -55°C to 175°C.
- Typical gate charge of 8.4 nanocoulombs at Vgs.
- Forward voltage of 1.6 volts ensures minimal losses.
- Designed for through-hole mounting in industrial and electronic applications.
- Compact dimensions of 10.41 mm length, 9.01 mm height, and 4.7 mm width.
Product Description
Vishay IRLZ14PBF is a robust N-Channel MOSFET transistor designed for electronic and power circuit applications. Featuring a maximum continuous drain current of 10 A and a maximum drain-source voltage of 60 V, this device is ideal for switching and amplification tasks in industrial, automotive, and consumer electronic devices.
The transistor is housed in a TO-220 package with three pins, allowing easy integration into through-hole mounting systems. Its enhancement mode channel type provides efficient control with a maximum drain-source resistance of 200 milliohms, contributing to low conduction losses and improved energy efficiency.
Operating over a wide temperature range from -55°C up to 175°C, it supports demanding industrial environments. The typical gate charge of 8.4 nC ensures swift switching performance, while the forward voltage of 1.6 V minimizes power dissipation during operation. The transistor withstands a maximum power dissipation of 43 watts, suitable for moderate power applications.
Compact size dimensions of approximately 10.41 mm length, 9.01 mm height, and 4.7 mm width enable its use in space-constrained circuits. This product does not bear special certifications or automotive standards but aligns with industrial-grade semiconductor requirements.
High power dissipation capability of 43 watts. Enhancement mode operation ensures efficient switching. Low maximum drain-source resistance of 200 milliohms. Operating temperature range from -55°C to 175°C. Typical gate charge of 8.4 nanocoulombs at Vgs.
Forward voltage of 1.6 volts ensures minimal losses. Designed for through-hole mounting in industrial and electronic applications. Compact dimensions suitable for tight PCB layouts.
This Vishay IRLZ14PBF N-Channel MOSFET is well-suited for use in power management, motor control, switching regulators, and general electronic circuits requiring high efficiency and reliability.
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Frequently Asked Questions
The maximum continuous drain current for this model is 10 A.
It can handle a maximum drain-source voltage of 60 V.
This MOSFET has a maximum power dissipation capability of 43 watts.
The maximum drain-source resistance is 200 milliohms.
The operating temperature range is from -55°C to 175°C.
The dimensions are approximately 10.41 mm in length, 9.01 mm in height, and 4.7 mm in width.
This model is designed for through-hole mounting.
The typical gate charge is 8.4 nanocoulombs at Vgs.
The forward voltage is 1.6 volts, which helps minimize power losses.
The IRLZ14PBF has a pin count of 3.
It is suitable for power management, motor control, switching regulators, and general electronic circuits requiring high efficiency.
This model features an enhancement mode N-channel type.
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