Vishay N-Channel MOSFET 3.6 A 600 V Enhancement Mode, 3-Pin TO-220 IRFBC30PBF

Vishay IRFBC30PBF is an N-Channel MOSFET designed for high reliability and efficient switching performance with a continuous drain current of 3.6 A and a drain-source voltage rating of 600 V. This enhancement-mode device is housed in a durable TO-220 package with a through-hole mount suitable for industrial and electronic assembly applications.

With a maximum power dissipation of 74 W, the IRFBC30PBF MOSFET supports demanding power management tasks in industrial, HVAC, manufacturing, and power conversion environments. Its maximum drain-source resistance of 2.2 Ω ensures low conduction losses and reliable current flow in switching circuits.

This MOSFET features a typical gate charge of 31 nC enabling fast switching speeds, and it tolerates gate-source voltages ranging from -20 V to +20 V, providing enhanced protection against voltage spikes. The device operates over a broad temperature range from -55°C to 150°C, enabling stable performance under harsh thermal conditions.

The compact TO-220 package measures 10.41 mm in length, 9.01 mm in height, and 4.7 mm in width, facilitating efficient PCB space utilization. Its forward voltage is rated at 1.5 V, supporting energy-efficient applications. Vishay’s manufacturing quality ensures compliance with industrial standards, making this MOSFET suitable for electronic components, power management systems, and discrete semiconductor use.

This MOSFET operates in enhancement mode for efficient switching performance. The device has a maximum power dissipation of 74 W suitable for robust applications. With a maximum drain-source resistance of 2.2 Ω, it supports reliable conduction.

It includes 3 pins with through-hole mounting to simplify PCB integration. Designed for operation in wide temperature ranges from -55°C to 150°C. The device has a typical gate charge of 31 nC, ensuring fast switching capabilities.

Maximum gate-source voltage tolerance is -20 to +20 V for durability. Compact dimensions of 10.41 mm length, 9.01 mm height, and 4.7 mm width support compact designs. Forward voltage is rated at 1.5 V optimizing power efficiency.

This product is ideal for use in industrial electronics, power conversion, motor drives, and electronic control applications. Vishay IRFBC30PBF supports designers requiring compact, reliable, and robust discrete semiconductor devices for thermal and electrical stress conditions.

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