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Vishay N-Channel MOSFET 1.8 A 800 V Enhancement Mode 3-Pin TO-220 IRFBE20PBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 9.01mm |
| Length | 10.41mm |
| Model | IRFBE20PBF |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Series | IRFBE |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 1.8A |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 6.5Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 54W |
| Typical Gate Charge Qg @ Vgs | 38nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.4V |
| N-channel MOSFET,IRFBE20 1.8A 800VBrand | Vishay |
Key Features
- Enhancement mode MOSFET suitable for high voltage switching applications.
- Supports a maximum power dissipation of 54 watts.
- Features a low maximum drain-source resistance of 6.5 ohms for efficient conduction.
- Operates reliably across a temperature range from -55°C to 150°C.
- Compact dimensions of 10.41 mm length, 4.7 mm width, and 9.01 mm height.
- Typical gate charge of 38 nC allows for efficient switching performance.
- Maximum gate-source voltage rated at ±20 V.
- Designed for through hole mounting in electronic assemblies.
Product Description
The Vishay IRFBE20PBF is an N-Channel Enhancement Mode MOSFET designed for reliable high voltage switching and amplification in electronic circuits. With a maximum continuous drain current of 1.8 amperes and a drain-source voltage rating of 800 volts, this device is well-suited for power management, industrial controls, and consumer electronics requiring efficient power transistors.
Housed in a 3-pin TO-220 package, the device supports through-hole mounting, facilitating easy integration into printed circuit boards. Its low maximum drain-source resistance of 6.5 ohms ensures efficient conduction with minimal losses, while the maximum power dissipation of 54 watts allows for robust operation under demanding conditions.
The IRFBE20PBF operates safely over a wide temperature range from -55°C to 150°C, maintaining performance stability in industrial and commercial environments. Featuring a typical gate charge of 38 nC at Vgs, it offers fast switching characteristics with a maximum gate-source voltage tolerance of ±20 volts, contributing to circuit protection and reliability.
The device features compact dimensions of 10.41 mm length, 4.7 mm width, and 9.01 mm height, enabling space-efficient layouts. Its forward voltage of 1.4 V minimizes voltage drop during operation, enhancing overall circuit efficiency.
This MOSFET is ideal for industrial, laboratory, manufacturing, and commercial electronics applications where precise control of power and switching performance is critical. It is also suitable for use in power supply circuits, motor drivers, and general-purpose amplification.
Enhancement mode MOSFET suitable for high voltage switching applications. Supports a maximum power dissipation of 54 watts. Features a low maximum drain-source resistance of 6.5 ohms for efficient conduction. Operates reliably across a temperature range from -55°C to 150°C.
Compact dimensions of 10.41 mm length, 4.7 mm width, and 9.01 mm height. Typical gate charge of 38 nC allows for efficient switching performance. Maximum gate-source voltage rated at ±20 V. Designed for through hole mounting in electronic assemblies.
Forward voltage of 1.4 V ensures minimal voltage drop during conduction. Explore more Vishay semiconductors and MOSFET components on EnvMart for reliable electronic design solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 1.8 amperes.
This MOSFET has a maximum drain-source voltage rating of 800 volts.
It supports a maximum power dissipation of 54 watts.
The dimensions of this model are 10.41 mm in length, 4.7 mm in width, and 9.01 mm in height.
The typical gate charge is 38 nC at Vgs.
The maximum gate-source voltage is rated at ±20 volts.
It features a low maximum drain-source resistance of 6.5 ohms.
It operates reliably across a temperature range from -55°C to 150°C.
This model is designed for through-hole mounting in electronic assemblies.
The forward voltage is 1.4 V, which minimizes voltage drop during operation.
This device is an N-channel enhancement mode MOSFET.
It is housed in a 3-pin TO-220 package.
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