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Vishay P-Channel MOSFET, Enhancement Mode, 3.5 A Drain Current, 200 V Voltage, TO-220 Package IRF9620PBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 9.01mm |
| Length | 10.41mm |
| Model | IRF9620PBF |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Series | IRF |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 3.5A |
| Maximum Drain Source Voltage Vds | 200V |
| Maximum Drain Source Resistance Rds | 1.5Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 40W |
| Typical Gate Charge Qg @ Vgs | 22nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -7V |
| P-Channel MOSFET Transistor, 3.5 A, 200 V, 3-Pin TO-220AB Magnatec IRF9620Brand | Magnatec |
| P-channel MOSFET,IRF9620 3.5A 200VBrand | Vishay |
Key Features
- Packaged in a TO-220 through-hole package with 3 pins for easy mounting.
- Features an enhancement mode channel type for reliable performance.
- Maximum power dissipation up to 40 W, suitable for moderate power electronics.
- Operates safely from -55°C to 150°C ensuring wide temperature stability.
- Maximum gate-source voltage rating of ±20 V for robust control.
- Low maximum drain-source resistance of 1.5 Ω which reduces power losses.
- Typical gate charge of 22 nC at specified gate voltage enabling fast switching.
- Product designed without automotive standards, intended for general application use.
Product Description
Vishay IRF9620PBF is a high-quality P-Channel MOSFET transistor designed for enhancement mode operation with a maximum continuous drain current of 3.5 A and a maximum drain-source voltage of 200 V. It is delivered in a durable TO-220 package suitable for through-hole mounting applications.
This MOSFET offers rugged device design combined with fast switching capabilities and low on-resistance, making it suitable for various commercial and industrial power management circuits where moderate power dissipation up to 40 W is required.
The device operates reliably across a wide temperature range from -55°C to 150°C, providing performance stability in harsh environments. The gate-source voltage rating of -20 V to +20 V protects the device during control signal variations.
Key features include a low maximum drain-source resistance of 1.5 Ω, which minimizes conduction losses, and a typical gate charge of 22 nC at the gate voltage, enabling efficient switching speeds in switching power supplies and motor control.
The compact TO-220 package dimensions (10.41 mm length × 9.01 mm height × 4.7 mm width) ensure easy integration into PCB designs with through-hole mounting requirements. While the product does not conform to automotive-grade standards, it is ideal for general electronics power applications.
Packaged in a TO-220 through-hole package. Rated for continuous drain current of 3.5 A and drain-source voltage of 200 V. Enhancement mode P-Channel for reliable switching. Maximum power dissipation of 40 W supports moderate loads.
Wide operating temperature range from -55°C to 150°C. Low on-resistance reduces power loss and heat generation. Maximum gate-source voltage of ±20 V for device protection. Compact dimensions facilitate PCB integration.
This Vishay IRF9620PBF P-Channel MOSFET is suitable for use in industrial, commercial, and electronic power management applications including switching power supplies, motor drivers, and general amplification purposes. It provides a robust foundation for circuits demanding efficient and fast switching semiconductor devices.
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Frequently Asked Questions
The maximum continuous drain current for this MOSFET is 3.5 A.
The maximum drain-source voltage rating is 200 V.
This model is packaged in a TO-220 through-hole package.
The maximum power dissipation is up to 40 W.
It operates reliably across a wide temperature range from -55°C to 150°C.
The maximum gate-source voltage rating is ±20 V.
The maximum drain-source resistance is 1.5 Ω.
The typical gate charge is 22 nC at the specified gate voltage.
The TO-220 package has 3 pins for mounting.
This MOSFET features an enhancement mode P-channel type.
It is suitable for use in power management circuits, including switching power supplies and motor drivers.
The dimensions of the TO-220 package are 10.41 mm in length, 9.01 mm in height, and 4.7 mm in width.
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