Toshiba N-Channel MOSFET, 168 A, 75 V, 8-Pin SOP, Surface Mount, 2.6mΩ Rds(on), 2.5W Pd TPH2R608NH,L1Q(M

Toshiba TPH2R608NH,L1Q(M is an advanced N-Channel MOSFET semiconductor component designed primarily for high current and voltage applications. This device is housed in an 8-pin SOP package suitable for surface mount installation on printed circuit boards.

With a maximum continuous drain current rating of 168 A and maximum drain-source voltage of 75 V, this MOSFET provides robust conduction capabilities for power electronics designs. It features a low maximum drain-source resistance (Rds) of just 2.6 milliohms, enhancing efficiency by reducing conduction losses.

The MOSFET supports a maximum power dissipation of 2.5 watts and maintains operational integrity over a wide temperature range from -55°C to 150°C, making it suitable for demanding industrial and electronic environments. Its gate-source voltage maximum rating of 20 V and forward voltage of -1.2 V complement high speed switching needs.

The physical dimensions of 6 mm length, 5 mm width, and 950 micrometers height provide a compact footprint ideal for modern dense PCB layouts. Typical gate charge of 72 nC at gate-source voltage makes it optimized for efficient switching frequency applications.

This Toshiba N-Channel MOSFET is extensively used in high efficiency DC-DC converters and switching voltage regulator circuits, common in power management, automotive electronics, and industrial control systems. Its fast switching performance and low resistance characteristics contribute to energy savings and reliable operation in complex electrical assemblies.

Key technical features include surface mount SOP package with 8 pins, high current and voltage specifications, and thermal robustness. The device carries no specific automotive standards or special approvals but meets general semiconductor reliability criteria.

Choose this Toshiba MOSFET for your advanced power electronics design requiring robust N-channel switching with high current capacity and efficiency. Explore additional Toshiba semiconductor components and related electronic discrete devices in the same category at EnvMart for comprehensive solutions.

Maximum continuous drain current of 168 A for high power applications. Maximum drain-source voltage rating of 75 V ensuring reliable switching. Low maximum drain-source resistance of 2.6 milliohms for efficient power conduction.

Capable of dissipating maximum power of 2.5 W across wide temperature range. Forward voltage of -1.2 V and gate charge of 72 nC at Vgs for switching efficiency. Compact 8-pin SOP surface mount package with dimensions 6 mm x 5 mm x 0.95 mm.

Operating temperature from -55°C to 150°C suits industrial applications. High speed switching suitable for DC-DC converters and voltage regulators. Discover the full range of Toshiba MOSFETs and power semiconductors on EnvMart for your next industrial, automotive, or electronic project.