$4.85
$4.70
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
STMicroelectronics MDmesh SuperMESH N-Channel MOSFET 9 A 800 V Enhancement 3-Pin TO-247 STW10NK80Z
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 20.15mm |
| Length | 15.75mm |
| Model | STW10NK80Z |
| Width | 5.15mm |
| Mount Type | Through Hole |
| Series | MDmesh, SuperMESH |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 9A |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 900mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 160W |
| Typical Gate Charge Qg @ Vgs | 72nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.6V |
| N-channel MOSFET,2SK2607 9A 800VBrand | Toshiba |
Key Features
- This MOSFET features enhancement channel mode for efficient switching.
- Maximum power dissipation is rated at 160W for reliable operation.
- Typical gate charge of 72nC at Vgs optimizes switching performance.
- Operating temperature ranges from -55°C up to 150°C for various environments.
- Maximum drain-source resistance is 900 mΩ ensuring low conduction losses.
- Designed with a forward voltage of 1.6V to improve efficiency.
- Compact dimensions of 20.15mm height, 15.75mm length, and 5.15mm width.
- Suitable for through-hole mounting in industrial electronic applications.
Product Description
STMicroelectronics STW10NK80Z is a MDmesh SuperMESH N-Channel MOSFET designed for applications requiring 9 A continuous drain current and 800 V drain-source voltage. Packaged in a robust 3-pin TO-247 form factor, this device supports enhancement channel mode for efficient switching in power electronics.
The MOSFET’s maximum power dissipation rating of 160 watts allows it to handle demanding industrial load conditions. With a typical gate charge of 72nC at Vgs, it ensures swift switching response and minimal losses. The device operates reliably across a wide temperature range, from -55°C to 150°C, making it suitable for industrial settings subjected to harsh environments.
This component has a maximum drain-source resistance of 900 milliohms, which reduces conduction losses and improves efficiency. The forward voltage of 1.6 volts supports effective power transfer and thermal performance.
The STW10NK80Z features compact physical dimensions: 20.15 mm in height, 15.75 mm in length, and 5.15 mm width, making it compatible for through-hole mounting on industrial printed circuit boards. It does not comply with automotive standards but is suited to industrial, commercial, and manufacturing power supplies.
Applications for this MOSFET include power management, industrial motor drives, power converters, uninterruptible power supplies (UPS), and other semiconductor switching requirements in electrical engineering. The MDmesh SuperMESH series is known for robust design and high performance in power switching.
This MOSFET features enhancement channel mode for efficient switching. Maximum power dissipation is rated at 160W for reliable operation. Typical gate charge of 72nC at Vgs optimizes switching performance. Operating temperature ranges from -55°C up to 150°C for various environments.
Maximum drain-source resistance is 900 mΩ ensuring low conduction losses. Designed with a forward voltage of 1.6V to improve efficiency. Compact dimensions of 20.15mm height, 15.75mm length, and 5.15mm width. Suitable for through-hole mounting in industrial electronic applications.
No automotive standard compliance on this MOSFET. Ideal for power management in industrial and commercial electronics. Explore the Electronics & Electricals category at EnvMart for more STMicroelectronics high-quality semiconductor components designed to meet industrial and manufacturing demands.
Explore more products in our MOSFETs category.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for this model is 9 A.
The maximum drain-source voltage rating is 800 V.
It has a maximum power dissipation rating of 160 W.
The typical gate charge at Vgs is 72 nC.
The dimensions are 20.15 mm in height, 15.75 mm in length, and 5.15 mm in width.
The maximum drain-source resistance is 900 mΩ.
The operating temperature range is from -55°C to 150°C.
This model supports through-hole mounting.
The forward voltage is 1.6 V.
The package type is TO-247.
It is an N-channel MOSFET.
This MOSFET is suitable for power management, industrial motor drives, power converters, and uninterruptible power supplies (UPS).
Related Products
Other Products from this brand
Recently Viewed Products
$4.85
$4.70
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent