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Vishay SiR462DP N-Channel MOSFET, 19 A, 30 V Enhancement Mode, 8-Pin SO-8 Package SIR462DP-T1-GE3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 1.04mm |
| Length | 4.9mm |
| Model | SIR462DP-T1-GE3 |
| Width | 5.89mm |
| Mount Type | Surface |
| Series | SiR462DP |
| Maximum Operating Temperature | 150°C |
| Package Type | SO-8 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 19A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 8mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 4.8W |
| Typical Gate Charge Qg @ Vgs | 20nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 800mV |
Key Features
- The MOSFET is packaged in an 8-pin SO-8 surface-mount package.
- It operates in enhancement mode with a maximum drain-source resistance of 8 mΩ.
- The device supports a maximum power dissipation of 4.8 W and a maximum operating temperature of 150°C.
- Typical gate charge is 20 nC, supporting efficient switching performance.
- Designed to operate within a temperature range from -55°C to 150°C.
- The maximum gate-source voltage is ±20 V, ensuring robust gate control.
- Physical dimensions include length of 4.9 mm, width of 5.89 mm, and height of 1.04 mm.
- Suitable for use in industrial, power management, and electronic circuit applications requiring reliable high-current switching.
Product Description
Vishay SIR462DP-T1-GE3 is a high-performance N-Channel MOSFET designed for efficient power switching and amplification. It supports a maximum continuous drain current of 19 A and a drain-source voltage rating of 30 V, making it ideal for a variety of electronic components and power management systems.
This MOSFET is housed in a compact 8-pin SO-8 surface-mount package, allowing for easy integration into modern electronic circuits. It operates in enhancement mode with a very low typical drain-source resistance of 8 mΩ, ensuring minimal power loss and heat generation during operation.
Featuring a maximum power dissipation rating of 4.8 W and a maximum operating temperature of 150°C, this device is engineered to perform reliably in demanding industrial and electronic environments. The typical gate charge of 20 nC enables fast switching speeds with lower switching losses.
The SIR462DP-T1-GE3 functions effectively over a wide temperature range from -55°C to 150°C and has a maximum gate-source voltage tolerance of ±20 V, which helps maintain device integrity and performance under varying conditions.
With physical dimensions of 4.9 mm in length, 5.89 mm in width, and 1.04 mm in height, this MOSFET offers a compact footprint suitable for space-constrained applications.
This device is widely applicable in industrial electronics, power supplies, motor control, and other high-current switching applications where reliable and efficient MOSFET performance is essential.
The MOSFET features a compact SO-8 surface-mount 8-pin package. Designed for high-efficiency power switching applications. Supports a maximum continuous drain current of 19 A and drain-source voltage of 30 V. Low typical drain-source resistance of 8 mΩ reduces conduction losses.
Wide operating temperature range from -55°C to 150°C. Maximum gate-source voltage of ±20 V ensures robust gate control. Maximum power dissipation rating of 4.8 W supports demanding workloads. Typical gate charge of 20 nC facilitates fast switching.
Compact dimensions of 4.9 mm x 5.89 mm x 1.04 mm for space-efficient designs. Explore more power semiconductor solutions and electronic components in the MOSFET category at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this MOSFET is 19 A.
The maximum drain-source voltage rating is 30 V.
The typical gate charge is 20 nC, which supports efficient switching performance.
The physical dimensions of the SO-8 package are 4.9 mm in length, 5.89 mm in width, and 1.04 mm in height.
The maximum power dissipation rating is 4.8 W.
The operating temperature range is from -55°C to 150°C.
The maximum gate-source voltage is ±20 V.
This MOSFET uses surface mounting.
The typical drain-source resistance is 8 mΩ.
This MOSFET is suitable for industrial electronics, power supplies, motor control, and other high-current switching applications.
The SiR462DP has 8 pins.
The channel type of this MOSFET is N-channel.
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