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Infineon IPZ N-Channel MOSFET 40 A, 40 V, 8-Pin SuperSO8 5x6 Surface Mount IPZ40N04S5L7R4ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IPZ40N04S5L7R4ATMA1 |
| Mount Type | Surface |
| Series | IPZ |
| Maximum Operating Temperature | 175°C |
| Package Type | SuperSO8 5 x 6 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 40A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 1.4mΩ |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.1V |
Key Features
- This MOSFET is designed for automotive applications with AEC Q101 qualification.
- Features a low drain-source resistance of 1.4 milliohms for high efficiency.
- Supports surface mount using the SuperSO8 5x6 package format.
- Operates reliably from -55°C to 175°C, suitable for harsh environments.
- Capable of dissipating a maximum power of 81 W.
- Has a maximum gate-source voltage rating of 20 V and a forward voltage of 1.1 V.
- Typical gate charge at Vgs is 80 nanocoulombs, enabling fast switching.
- RoHS compliant and 100% avalanche tested for reliability.
Product Description
The Infineon IPZ40N04S5L7R4ATMA1 is an N-Channel MOSFET intended for high-performance automotive and industrial applications. Featuring a continuous drain current of 40 A and a maximum drain-source voltage of 40 V, this device provides efficient power switching in a compact 8-pin SuperSO8 5x6 surface-mount package.
This MOSFET guarantees robust operation across a wide temperature range from -55°C to 175°C, making it well-suited for demanding environments such as automotive systems, industrial machinery, and power management solutions. It supports a maximum power dissipation of 81 W, with a low Rds(on) of 1.4 milliohms which minimizes conduction losses.
The device is AEC Q101 qualified, ensuring compliance with automotive quality standards, and has been subjected to 100% avalanche testing for enhanced reliability. Its logic-level gate drive and maximum gate-source voltage of 20 V provide efficient switching characteristics with a typical gate charge of 80 nC at Vgs.
With RoHS compliance, this MOSFET meets environmental standards essential for modern electronics manufacturing. It is suitable for applications including automotive powertrain electronics, DC/DC converters, motor drives, and general-purpose switching circuits.
This MOSFET is designed for automotive applications with AEC Q101 qualification. Features a low drain-source resistance of 1.4 milliohms for high efficiency. Supports surface mount using the SuperSO8 5x6 package format. Operates reliably from -55°C to 175°C, suitable for harsh environments.
Capable of dissipating a maximum power of 81 W. Has a maximum gate-source voltage rating of 20 V and a forward voltage of 1.1 V. Typical gate charge at Vgs is 80 nanocoulombs, enabling fast switching. RoHS compliant and 100% avalanche tested for reliability.
Explore more Infineon MOSFETs and semiconductor components in the Electronics & Electricals category on EnvMart for your industrial and automotive projects.
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Frequently Asked Questions
The maximum continuous drain current for this model is 40 A.
This MOSFET has a maximum drain-source voltage rating of 40 V.
It comes in a SuperSO8 5 x 6 surface-mount package format.
The operating temperature range is from -55°C to 175°C, making it suitable for harsh environments.
This model can dissipate a maximum power of 81 W.
The maximum gate-source voltage for this MOSFET is 20 V.
The typical gate charge at Vgs is 80 nanocoulombs (nC).
The forward voltage for this model is 1.1 V.
It is AEC-Q101 qualified, ensuring compliance with automotive quality standards.
The maximum drain-source resistance (Rds(on)) is 1.4 milliohms.
Yes, this MOSFET is RoHS compliant, meeting environmental standards for electronics manufacturing.
This MOSFET has a pin count of 8.
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