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Infineon N-Channel MOSFET 13 A, 1.2 kV Enhancement Mode, 4-Pin TO-247 IMZ120R220M1HXKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IMZ120R220M1HXKSA1 |
| Mount Type | Surface |
| Series | IMZ1 |
| Package Type | TO-247 |
| Pin Count | 4 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 13A |
| Maximum Drain Source Voltage Vds | 1.2kV |
| Maximum Drain Source Resistance Rds | 220mΩ |
| Channel Mode | Enhancement |
Key Features
- The device features an enhancement channel mode for effective switching control.
- Maximum continuous drain current is rated at 13 amperes ensuring reliable current handling.
- Capable of sustaining a maximum drain-source voltage of 1.2 kV, suitable for high voltage circuits.
- Package type is TO-247 with 4 pins for easy surface mounting on PCB.
- Offers low drain-source resistance of 220 milliohms to reduce conduction losses.
- Designed with robust body diode rated for hard commutation and temperature independent switching losses.
- Features a wide gate-source voltage range and a high threshold voltage above 4 volts.
- Optimized trench semiconductor process technology ensures performance and reliability.
Product Description
Infineon IMZ120R220M1HXKSA1 is a high-performance N-Channel MOSFET designed for industrial, power management, and electronic applications. This device is constructed using CoolSiC™ technology with a 1.2 kV voltage rating and a maximum continuous drain current of 13 A, packaged in a durable TO-247 4-pin surface mount format.
Engineered to deliver best-in-class switching and conduction efficiency, this MOSFET features a benchmark high threshold voltage higher than 4 V, 0 V turn-off gate voltage for simplified gate drive, and a wide gate-source voltage range. The low switching losses are temperature independent, enhancing device reliability in various thermal environments.
Compared to traditional silicon switches, the SiC MOSFET offers advantages including lower gate charge, reduced device capacitance, and no reverse recovery losses from the internal body diode, making it highly efficient for power conversion and electronic drive circuits.
The 220 milliohm maximum drain-source resistance minimizes conduction losses. Additionally, the robust and low loss body diode is rated for hard commutation, making it suitable for demanding applications in industrial electronics and power systems.
The MOSFET is ideal for applications in industrial power electronics, HVAC systems, electric vehicle inverters, and renewable energy converters. The device supports surface mounting with a 4-pin TO-247 package, ensuring ease of integration and heat dissipation.
The enhanced trench process semiconductor fabrication assures high-performance switching and long-term reliability.
Available for bulk purchase, this Infineon MOSFET is suitable for engineering design, manufacturing, and research institutions requiring efficient and reliable power semiconductor devices.
Explore more Infineon power semiconductors and MOSFETs on EnvMart for comprehensive industrial and electronic component solutions.
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Frequently Asked Questions
The maximum continuous drain current of this model is rated at 13 amperes.
It can sustain a maximum drain-source voltage of 1.2 kV, making it suitable for high voltage circuits.
This MOSFET is packaged in a TO-247 format with 4 pins for easy surface mounting on a PCB.
The maximum drain-source resistance is 220 milliohms, which helps reduce conduction losses.
It features an N-channel type with enhancement mode for effective switching control.
The CoolSiC™ technology provides advantages such as lower gate charge, reduced device capacitance, and eliminates reverse recovery losses from the internal body diode.
It has a wide gate-source voltage range, with a high threshold voltage above 4 volts.
It is ideal for applications in industrial power electronics, HVAC systems, electric vehicle inverters, and renewable energy converters.
The robust body diode is rated for hard commutation, making it suitable for demanding applications in industrial electronics and power systems.
The country of origin for this device is India.
This model is designed for surface mounting, ensuring ease of integration and heat dissipation.
It belongs to the IMZ1 series of Infineon MOSFETs.
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