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onsemi Insulated Gate Bipolar Transistor IGBT 650 V 75 A 3-Pin TO-247-4LD Package FGHL75T65LQDTL4
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 4.82mm |
| Length | 15.87mm |
| Model | FGHL75T65LQDTL4 |
| Width | 20.82mm |
| Mount Type | Surface |
| Series | FGHL75T65LQDTL4 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247-4LD |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 650V |
| Maximum Power Dissipation Pd | 469W |
| Maximum Gate Emitter Voltage VGEO | 20 V |
Key Features
- Maximum collector emitter voltage of 650 V ensuring high voltage performance.
- Maximum power dissipation of 469 watts for efficient thermal management.
- Compact TO-247-4LD package with surface mount design for versatile assembly.
- Wide operating temperature range from -55°C to 175°C for robust industrial usage.
- Low conduction losses and positive temperature coefficient for easy paralleling operation.
- Maximum gate emitter voltage rated at 20 V for reliable gate control.
- Complies with RoHS standards for environmental safety.
Product Description
onsemi model FGHL75T65LQDTL4 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power electronics applications. It supports a maximum collector emitter voltage of 650 V and a maximum continuous current of 75 A, making it suitable for industrial and automotive power control circuits.
This device features a 3-pin TO-247-4LD surface mount package, providing robust mechanical stability and reliability for surface mounting on PCBs.
The FGHL75T65LQDTL4 operates efficiently with a maximum power dissipation rating of 469 W and a gate emitter voltage maximum of 20 V. It supports a wide temperature range from -55°C to 175°C to meet harsh environmental demands.
The positive temperature coefficient characteristic allows easy paralleling of multiple devices, reducing system complexity. Its low conduction losses optimize system efficiency. The device’s dimensions are width 20.82 mm, length 15.87 mm, and height 4.82 mm, suitable for compact power assemblies.
This IGBT is RoHS compliant ensuring environmentally friendly operation and disposal. Its primary applications include solar inverters, uninterruptible power supplies (UPS), electric vehicle charging stations, energy storage systems (ESS), and other high-performance power conversion equipment.
Maximum collector emitter voltage of 650 V ensuring high voltage performance. Maximum power dissipation of 469 watts for efficient thermal management. Compact TO-247-4LD package with surface mount design for versatile assembly.
Wide operating temperature range from -55°C to 175°C for robust industrial usage. Low conduction losses and positive temperature coefficient for easy paralleling operation. Maximum gate emitter voltage rated at 20 V for reliable gate control.
Dimensions of 20.82 mm width, 15.87 mm length, and 4.82 mm height for space-constrained designs. Complies with RoHS standards for environmental safety.
This product is ideal for industrial, automotive, renewable energy, HVAC, and manufacturing applications requiring reliable and efficient power switching components. Explore more onsemi IGBTs and discrete semiconductors on EnvMart for your power conversion needs.
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Frequently Asked Questions
The maximum collector emitter voltage of this IGBT is 650 V, ensuring high voltage performance for various applications.
This model has a maximum continuous current rating of 75 A, making it suitable for demanding power control circuits.
It supports a maximum power dissipation of 469 W, which aids in efficient thermal management during operation.
The dimensions of the TO-247-4LD package are 20.82 mm in width, 15.87 mm in length, and 4.82 mm in height.
This IGBT operates within a wide temperature range from -55°C to 175°C, suitable for robust industrial usage.
The maximum gate emitter voltage rated for this IGBT is 20 V, ensuring reliable gate control.
It features a surface mount design, allowing for versatile assembly on printed circuit boards (PCBs).
This model is suitable for applications including solar inverters, uninterruptible power supplies (UPS), and electric vehicle charging stations.
Yes, it complies with RoHS standards, ensuring environmentally friendly operation and disposal.
This IGBT has a pin count of 3, which is standard for its package type.
The positive temperature coefficient characteristic allows for easy paralleling of multiple devices, simplifying system design.
The country of origin for this IGBT is India.
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